JPS5598832A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5598832A
JPS5598832A JP695779A JP695779A JPS5598832A JP S5598832 A JPS5598832 A JP S5598832A JP 695779 A JP695779 A JP 695779A JP 695779 A JP695779 A JP 695779A JP S5598832 A JPS5598832 A JP S5598832A
Authority
JP
Japan
Prior art keywords
film
opening
provided
14a
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP695779A
Inventor
Kazuya Kauchi
Original Assignee
Nec Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Kyushu Ltd filed Critical Nec Kyushu Ltd
Priority to JP695779A priority Critical patent/JPS5598832A/en
Publication of JPS5598832A publication Critical patent/JPS5598832A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To taper an opening and prevent the snapping of metal wiring provided in the opening, by combining an oxidizer with silazane and performing surface treatment when making the opening in an insulating film on a semiconductor substrate provided with a diffused region.
CONSTITUTION: An oxide film 13 is coated on a p-type Si substrate 11 and provided with an opening to produce an n+-type region 12 by diffusion. At that time, a PSG film 14 is also produced. The substrate 11 is dipped in a mixed liquid containing a hydrogen peroxide solution and aqueous ammonia. As a result, the film 14 on the region 12 is removed and the film 14 on the oxide film 13 is changed into a film 14a of small thickness. A mask 15 made of a photoresist film and having an opening is provided on the film 14a. Hexamethyldisilazane treatment is effected to raise and stabilize the adhesive power between the film 14a and the mask 15. A hole is opened through the exposed film 14 and then through the film 13. Etching is effected by an ammonium fluoride mixed liquid to provide the film 13 with an opening which has a small angle θ12 approximate to that θ11 of the opening over the resion 12.
COPYRIGHT: (C)1980,JPO&Japio
JP695779A 1979-01-23 1979-01-23 Manufacture of semiconductor device Pending JPS5598832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP695779A JPS5598832A (en) 1979-01-23 1979-01-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP695779A JPS5598832A (en) 1979-01-23 1979-01-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5598832A true JPS5598832A (en) 1980-07-28

Family

ID=11652695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP695779A Pending JPS5598832A (en) 1979-01-23 1979-01-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598832A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US7626202B2 (en) 1999-07-22 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US7956359B2 (en) 1999-07-22 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US8258515B2 (en) 1999-07-22 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US8368076B2 (en) 1999-07-22 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US8624253B2 (en) 1999-07-22 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device

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