JPS5560090A - Crucible for production of single crystal - Google Patents

Crucible for production of single crystal

Info

Publication number
JPS5560090A
JPS5560090A JP13043178A JP13043178A JPS5560090A JP S5560090 A JPS5560090 A JP S5560090A JP 13043178 A JP13043178 A JP 13043178A JP 13043178 A JP13043178 A JP 13043178A JP S5560090 A JPS5560090 A JP S5560090A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
bending
side wall
high quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13043178A
Other languages
Japanese (ja)
Inventor
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13043178A priority Critical patent/JPS5560090A/en
Publication of JPS5560090A publication Critical patent/JPS5560090A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To easily produce a high quality, long size single crystal without bending in pulling by forming a noble metal crucible into an inverted trapezoid section to reduce the after-heater effect of the crucible side wall due to a melt level lowering.
CONSTITUTION: In production of an X axis-pulled LiTaO3 or LiNbO3 single crystal by the Cyochralski method using a noble metal crucible such as a Pt-Rh alloy crucible, the crucible is formed into an inverted trapezoid section of (D-d)/2H= 0.03W0.10, supposing the upper edge diameter of the crucible to be D, the bottom diameter to be d, and the height to be H. As a result, heat radiation on the crucible side wall exposed owing to a melt level lowering is turned upward to minimize influence on a temp. gradient in the vicinity of the crystal growing interface. Accordingly, a high quality, long size single crystal is obtd. without bending.
COPYRIGHT: (C)1980,JPO&Japio
JP13043178A 1978-10-25 1978-10-25 Crucible for production of single crystal Pending JPS5560090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13043178A JPS5560090A (en) 1978-10-25 1978-10-25 Crucible for production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13043178A JPS5560090A (en) 1978-10-25 1978-10-25 Crucible for production of single crystal

Publications (1)

Publication Number Publication Date
JPS5560090A true JPS5560090A (en) 1980-05-06

Family

ID=15034065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13043178A Pending JPS5560090A (en) 1978-10-25 1978-10-25 Crucible for production of single crystal

Country Status (1)

Country Link
JP (1) JPS5560090A (en)

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