JPS5543890A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5543890A
JPS5543890A JP11813578A JP11813578A JPS5543890A JP S5543890 A JPS5543890 A JP S5543890A JP 11813578 A JP11813578 A JP 11813578A JP 11813578 A JP11813578 A JP 11813578A JP S5543890 A JPS5543890 A JP S5543890A
Authority
JP
Japan
Prior art keywords
film
region
heat
oxidized
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11813578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115591B2 (enrdf_load_stackoverflow
Inventor
Nobuhiro Minotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP11813578A priority Critical patent/JPS5543890A/ja
Publication of JPS5543890A publication Critical patent/JPS5543890A/ja
Publication of JPS6115591B2 publication Critical patent/JPS6115591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP11813578A 1978-09-22 1978-09-22 Manufacture of semiconductor device Granted JPS5543890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11813578A JPS5543890A (en) 1978-09-22 1978-09-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11813578A JPS5543890A (en) 1978-09-22 1978-09-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5543890A true JPS5543890A (en) 1980-03-27
JPS6115591B2 JPS6115591B2 (enrdf_load_stackoverflow) 1986-04-24

Family

ID=14728908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11813578A Granted JPS5543890A (en) 1978-09-22 1978-09-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5543890A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6115591B2 (enrdf_load_stackoverflow) 1986-04-24

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