JPS5530304B2 - - Google Patents
Info
- Publication number
- JPS5530304B2 JPS5530304B2 JP15936375A JP15936375A JPS5530304B2 JP S5530304 B2 JPS5530304 B2 JP S5530304B2 JP 15936375 A JP15936375 A JP 15936375A JP 15936375 A JP15936375 A JP 15936375A JP S5530304 B2 JPS5530304 B2 JP S5530304B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50159363A JPS5279666A (en) | 1975-12-25 | 1975-12-25 | Production of transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50159363A JPS5279666A (en) | 1975-12-25 | 1975-12-25 | Production of transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5279666A JPS5279666A (en) | 1977-07-04 |
| JPS5530304B2 true JPS5530304B2 (en:Method) | 1980-08-09 |
Family
ID=15692195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50159363A Granted JPS5279666A (en) | 1975-12-25 | 1975-12-25 | Production of transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5279666A (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5635464A (en) * | 1979-08-30 | 1981-04-08 | Toshiba Corp | Formation of npn type transistor |
| JPS58168221A (ja) * | 1982-03-29 | 1983-10-04 | Toshiba Corp | 半導体装置の製造方法 |
| JP3922337B2 (ja) * | 2000-08-28 | 2007-05-30 | サンケン電気株式会社 | 液状不純物源材料及びこれを使用した半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3798081A (en) * | 1972-02-14 | 1974-03-19 | Ibm | Method for diffusing as into silicon from a solid phase |
-
1975
- 1975-12-25 JP JP50159363A patent/JPS5279666A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5279666A (en) | 1977-07-04 |