JPS55154760A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55154760A
JPS55154760A JP6299279A JP6299279A JPS55154760A JP S55154760 A JPS55154760 A JP S55154760A JP 6299279 A JP6299279 A JP 6299279A JP 6299279 A JP6299279 A JP 6299279A JP S55154760 A JPS55154760 A JP S55154760A
Authority
JP
Japan
Prior art keywords
region
base
regions
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225269B2 (enrdf_load_stackoverflow
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6299279A priority Critical patent/JPS55154760A/ja
Publication of JPS55154760A publication Critical patent/JPS55154760A/ja
Publication of JPS6225269B2 publication Critical patent/JPS6225269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP6299279A 1979-05-22 1979-05-22 Semiconductor device Granted JPS55154760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299279A JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299279A JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55154760A true JPS55154760A (en) 1980-12-02
JPS6225269B2 JPS6225269B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=13216366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299279A Granted JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154760A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403928A3 (en) * 2002-09-27 2006-11-22 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403928A3 (en) * 2002-09-27 2006-11-22 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making

Also Published As

Publication number Publication date
JPS6225269B2 (enrdf_load_stackoverflow) 1987-06-02

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