JPS55142488A - Semiconductor nonvolatile memory unit - Google Patents

Semiconductor nonvolatile memory unit

Info

Publication number
JPS55142488A
JPS55142488A JP5104379A JP5104379A JPS55142488A JP S55142488 A JPS55142488 A JP S55142488A JP 5104379 A JP5104379 A JP 5104379A JP 5104379 A JP5104379 A JP 5104379A JP S55142488 A JPS55142488 A JP S55142488A
Authority
JP
Japan
Prior art keywords
layer
sio2
memory
electrons
memory unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5104379A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5104379A priority Critical patent/JPS55142488A/en
Publication of JPS55142488A publication Critical patent/JPS55142488A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Abstract

PURPOSE:To increase the memory storage performance and the memory erase performance of the said memory unit obtained by adding impurity compensating the catch center to electrons or holes present in the second dielectric substance layer. CONSTITUTION:The first dielectric substance layer formed on the semiconductor substrate 1, e.g., SiO2 layer 2, metal fine particle group scattered on the surface of the SiO2 layer 2, e.g., W fine particle group 3, second dielectric layer adding impurity so that the SiO2 layer 2 and fine particel group 3 can be covered, e.g., Si3N4 layer 5, are formed, and the gate electrode 6 is formed on the surface of the layer 5. With this construction, the catch center to the electrons present in the layer 5 is compensated with impurity, e.g., the ions of chlorine 4, and substantial catch center density is reduced. Accordingly, the memory storage characteristics of this memory is greatly improved, and the density of electrons caught is limited to the boundary of SiO2-Si3N4, resulting that the erase characteristics can be improved.
JP5104379A 1979-04-24 1979-04-24 Semiconductor nonvolatile memory unit Pending JPS55142488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5104379A JPS55142488A (en) 1979-04-24 1979-04-24 Semiconductor nonvolatile memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5104379A JPS55142488A (en) 1979-04-24 1979-04-24 Semiconductor nonvolatile memory unit

Publications (1)

Publication Number Publication Date
JPS55142488A true JPS55142488A (en) 1980-11-07

Family

ID=12875764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5104379A Pending JPS55142488A (en) 1979-04-24 1979-04-24 Semiconductor nonvolatile memory unit

Country Status (1)

Country Link
JP (1) JPS55142488A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222875A (en) * 2001-01-25 2002-08-09 Sony Corp Non-volatile semiconductor memory device and method of manufacturing the same
EP1411555A2 (en) * 2002-10-14 2004-04-21 Samsung Electronics Co., Ltd. Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
WO2006095890A1 (en) * 2005-03-07 2006-09-14 Nec Corporation Semiconductor device and method for manufacturing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222875A (en) * 2001-01-25 2002-08-09 Sony Corp Non-volatile semiconductor memory device and method of manufacturing the same
EP1411555A2 (en) * 2002-10-14 2004-04-21 Samsung Electronics Co., Ltd. Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
EP1411555A3 (en) * 2002-10-14 2005-02-02 Samsung Electronics Co., Ltd. Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
WO2006095890A1 (en) * 2005-03-07 2006-09-14 Nec Corporation Semiconductor device and method for manufacturing same
JPWO2006095890A1 (en) * 2005-03-07 2008-08-21 日本電気株式会社 Semiconductor device and manufacturing method thereof

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