JPS55142488A - Semiconductor nonvolatile memory unit - Google Patents
Semiconductor nonvolatile memory unitInfo
- Publication number
- JPS55142488A JPS55142488A JP5104379A JP5104379A JPS55142488A JP S55142488 A JPS55142488 A JP S55142488A JP 5104379 A JP5104379 A JP 5104379A JP 5104379 A JP5104379 A JP 5104379A JP S55142488 A JPS55142488 A JP S55142488A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio2
- memory
- electrons
- memory unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Abstract
PURPOSE:To increase the memory storage performance and the memory erase performance of the said memory unit obtained by adding impurity compensating the catch center to electrons or holes present in the second dielectric substance layer. CONSTITUTION:The first dielectric substance layer formed on the semiconductor substrate 1, e.g., SiO2 layer 2, metal fine particle group scattered on the surface of the SiO2 layer 2, e.g., W fine particle group 3, second dielectric layer adding impurity so that the SiO2 layer 2 and fine particel group 3 can be covered, e.g., Si3N4 layer 5, are formed, and the gate electrode 6 is formed on the surface of the layer 5. With this construction, the catch center to the electrons present in the layer 5 is compensated with impurity, e.g., the ions of chlorine 4, and substantial catch center density is reduced. Accordingly, the memory storage characteristics of this memory is greatly improved, and the density of electrons caught is limited to the boundary of SiO2-Si3N4, resulting that the erase characteristics can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5104379A JPS55142488A (en) | 1979-04-24 | 1979-04-24 | Semiconductor nonvolatile memory unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5104379A JPS55142488A (en) | 1979-04-24 | 1979-04-24 | Semiconductor nonvolatile memory unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55142488A true JPS55142488A (en) | 1980-11-07 |
Family
ID=12875764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5104379A Pending JPS55142488A (en) | 1979-04-24 | 1979-04-24 | Semiconductor nonvolatile memory unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55142488A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222875A (en) * | 2001-01-25 | 2002-08-09 | Sony Corp | Non-volatile semiconductor memory device and method of manufacturing the same |
EP1411555A2 (en) * | 2002-10-14 | 2004-04-21 | Samsung Electronics Co., Ltd. | Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory |
WO2006095890A1 (en) * | 2005-03-07 | 2006-09-14 | Nec Corporation | Semiconductor device and method for manufacturing same |
-
1979
- 1979-04-24 JP JP5104379A patent/JPS55142488A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222875A (en) * | 2001-01-25 | 2002-08-09 | Sony Corp | Non-volatile semiconductor memory device and method of manufacturing the same |
EP1411555A2 (en) * | 2002-10-14 | 2004-04-21 | Samsung Electronics Co., Ltd. | Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory |
EP1411555A3 (en) * | 2002-10-14 | 2005-02-02 | Samsung Electronics Co., Ltd. | Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory |
WO2006095890A1 (en) * | 2005-03-07 | 2006-09-14 | Nec Corporation | Semiconductor device and method for manufacturing same |
JPWO2006095890A1 (en) * | 2005-03-07 | 2008-08-21 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
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