JPS55134932A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS55134932A
JPS55134932A JP4254079A JP4254079A JPS55134932A JP S55134932 A JPS55134932 A JP S55134932A JP 4254079 A JP4254079 A JP 4254079A JP 4254079 A JP4254079 A JP 4254079A JP S55134932 A JPS55134932 A JP S55134932A
Authority
JP
Japan
Prior art keywords
film
etching
wiring
region
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4254079A
Other languages
English (en)
Inventor
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4254079A priority Critical patent/JPS55134932A/ja
Publication of JPS55134932A publication Critical patent/JPS55134932A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP4254079A 1979-04-10 1979-04-10 Preparation of semiconductor device Pending JPS55134932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4254079A JPS55134932A (en) 1979-04-10 1979-04-10 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4254079A JPS55134932A (en) 1979-04-10 1979-04-10 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55134932A true JPS55134932A (en) 1980-10-21

Family

ID=12638893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4254079A Pending JPS55134932A (en) 1979-04-10 1979-04-10 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55134932A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994003926A1 (de) * 1992-08-10 1994-02-17 Robert Bosch Gmbh Halbleiteranordnung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120681A (en) * 1974-07-27 1976-02-19 Oki Electric Ind Co Ltd Handotaisochino seizohoho
JPS5219070A (en) * 1975-08-05 1977-01-14 Toshiba Corp Distribution method
JPS5272570A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Formation of electrode of semiconductor deviced

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120681A (en) * 1974-07-27 1976-02-19 Oki Electric Ind Co Ltd Handotaisochino seizohoho
JPS5219070A (en) * 1975-08-05 1977-01-14 Toshiba Corp Distribution method
JPS5272570A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Formation of electrode of semiconductor deviced

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994003926A1 (de) * 1992-08-10 1994-02-17 Robert Bosch Gmbh Halbleiteranordnung

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