JPS55120168A - Field effect type semiconductor device - Google Patents

Field effect type semiconductor device

Info

Publication number
JPS55120168A
JPS55120168A JP2710879A JP2710879A JPS55120168A JP S55120168 A JPS55120168 A JP S55120168A JP 2710879 A JP2710879 A JP 2710879A JP 2710879 A JP2710879 A JP 2710879A JP S55120168 A JPS55120168 A JP S55120168A
Authority
JP
Japan
Prior art keywords
film
forming
layer
electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2710879A
Other languages
English (en)
Inventor
Shozo Watabe
Yoji Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2710879A priority Critical patent/JPS55120168A/ja
Publication of JPS55120168A publication Critical patent/JPS55120168A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8122—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2710879A 1979-03-08 1979-03-08 Field effect type semiconductor device Pending JPS55120168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2710879A JPS55120168A (en) 1979-03-08 1979-03-08 Field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2710879A JPS55120168A (en) 1979-03-08 1979-03-08 Field effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS55120168A true JPS55120168A (en) 1980-09-16

Family

ID=12211879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2710879A Pending JPS55120168A (en) 1979-03-08 1979-03-08 Field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS55120168A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466008A (en) * 1980-10-30 1984-08-14 Heinz Beneking Field effect transistor
JPS6348867A (ja) * 1986-08-15 1988-03-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− 垂直構造電界効果トランジスタとその製造方法
US5296719A (en) * 1991-07-22 1994-03-22 Matsushita Electric Industrial Co., Ltd. Quantum device and fabrication method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495583A (ja) * 1972-05-03 1974-01-18
JPS4911076A (ja) * 1972-05-25 1974-01-31
JPS5466780A (en) * 1977-11-08 1979-05-29 Fujitsu Ltd Manufacture for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495583A (ja) * 1972-05-03 1974-01-18
JPS4911076A (ja) * 1972-05-25 1974-01-31
JPS5466780A (en) * 1977-11-08 1979-05-29 Fujitsu Ltd Manufacture for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466008A (en) * 1980-10-30 1984-08-14 Heinz Beneking Field effect transistor
JPS6348867A (ja) * 1986-08-15 1988-03-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− 垂直構造電界効果トランジスタとその製造方法
US5296719A (en) * 1991-07-22 1994-03-22 Matsushita Electric Industrial Co., Ltd. Quantum device and fabrication method thereof

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