JPS5511745B2 - - Google Patents

Info

Publication number
JPS5511745B2
JPS5511745B2 JP9742876A JP9742876A JPS5511745B2 JP S5511745 B2 JPS5511745 B2 JP S5511745B2 JP 9742876 A JP9742876 A JP 9742876A JP 9742876 A JP9742876 A JP 9742876A JP S5511745 B2 JPS5511745 B2 JP S5511745B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9742876A
Other languages
Japanese (ja)
Other versions
JPS5322877A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9742876A priority Critical patent/JPS5322877A/ja
Publication of JPS5322877A publication Critical patent/JPS5322877A/ja
Publication of JPS5511745B2 publication Critical patent/JPS5511745B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP9742876A 1976-08-17 1976-08-17 Process for forming silicon nitride film by highhfrequency ionic plating method Granted JPS5322877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9742876A JPS5322877A (en) 1976-08-17 1976-08-17 Process for forming silicon nitride film by highhfrequency ionic plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9742876A JPS5322877A (en) 1976-08-17 1976-08-17 Process for forming silicon nitride film by highhfrequency ionic plating method

Publications (2)

Publication Number Publication Date
JPS5322877A JPS5322877A (en) 1978-03-02
JPS5511745B2 true JPS5511745B2 (US06277897-20010821-C00009.png) 1980-03-27

Family

ID=14192131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9742876A Granted JPS5322877A (en) 1976-08-17 1976-08-17 Process for forming silicon nitride film by highhfrequency ionic plating method

Country Status (1)

Country Link
JP (1) JPS5322877A (US06277897-20010821-C00009.png)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5044938A (US06277897-20010821-C00009.png) * 1973-08-27 1975-04-22
JPS50139037A (US06277897-20010821-C00009.png) * 1974-04-26 1975-11-06

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5044938A (US06277897-20010821-C00009.png) * 1973-08-27 1975-04-22
JPS50139037A (US06277897-20010821-C00009.png) * 1974-04-26 1975-11-06

Also Published As

Publication number Publication date
JPS5322877A (en) 1978-03-02

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