JPS5477081A - Semiconductor device and production of the same - Google Patents

Semiconductor device and production of the same

Info

Publication number
JPS5477081A
JPS5477081A JP14433577A JP14433577A JPS5477081A JP S5477081 A JPS5477081 A JP S5477081A JP 14433577 A JP14433577 A JP 14433577A JP 14433577 A JP14433577 A JP 14433577A JP S5477081 A JPS5477081 A JP S5477081A
Authority
JP
Japan
Prior art keywords
layer
poly
resistance
insulation
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14433577A
Other languages
English (en)
Other versions
JPS5910581B2 (ja
Inventor
Kazunari Shirai
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15359709&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5477081(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52144335A priority Critical patent/JPS5910581B2/ja
Priority to US05/964,514 priority patent/US4326213A/en
Priority to EP78300699A priority patent/EP0002364B1/en
Priority to DE7878300699T priority patent/DE2861770D1/de
Priority to CA317,243A priority patent/CA1109165A/en
Publication of JPS5477081A publication Critical patent/JPS5477081A/ja
Publication of JPS5910581B2 publication Critical patent/JPS5910581B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
JP52144335A 1977-12-01 1977-12-01 半導体装置の製造方法 Expired JPS5910581B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP52144335A JPS5910581B2 (ja) 1977-12-01 1977-12-01 半導体装置の製造方法
US05/964,514 US4326213A (en) 1977-12-01 1978-11-29 Semiconductor device and process for producing the same
EP78300699A EP0002364B1 (en) 1977-12-01 1978-11-30 Integrated semiconductor device and process for producing it
DE7878300699T DE2861770D1 (en) 1977-12-01 1978-11-30 Integrated semiconductor device and process for producing it
CA317,243A CA1109165A (en) 1977-12-01 1978-12-01 Semiconductor device and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52144335A JPS5910581B2 (ja) 1977-12-01 1977-12-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5477081A true JPS5477081A (en) 1979-06-20
JPS5910581B2 JPS5910581B2 (ja) 1984-03-09

Family

ID=15359709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52144335A Expired JPS5910581B2 (ja) 1977-12-01 1977-12-01 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US4326213A (ja)
EP (1) EP0002364B1 (ja)
JP (1) JPS5910581B2 (ja)
CA (1) CA1109165A (ja)
DE (1) DE2861770D1 (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644194A (en) * 1979-09-19 1981-04-23 Toshiba Corp Memory device
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
JPS5662356A (en) * 1979-10-26 1981-05-28 Seiko Instr & Electronics Ltd Logic integrated circuit device and its manufacturing method
JPS5696850A (en) * 1979-12-30 1981-08-05 Fujitsu Ltd Semiconductor device and manufacture thereof
EP0032608A1 (en) * 1980-01-22 1981-07-29 Mostek Corporation Column line powered static ram cell
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
JPS60167284U (ja) * 1984-04-12 1985-11-06 加藤発条株式会社 保持クランプ
JPS61214555A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体装置
IT1214621B (it) * 1985-07-04 1990-01-18 Ates Componenti Elettron Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta.
JPH0620110B2 (ja) * 1985-10-07 1994-03-16 日本電気株式会社 半導体装置
US4701241A (en) * 1986-10-06 1987-10-20 Rca Corporation Method of making a resistor
JPH0516475Y2 (ja) * 1987-07-17 1993-04-30
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JPH01152662A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd 半導体記憶装置
JPH0519672Y2 (ja) * 1988-02-16 1993-05-24
US5214497A (en) * 1988-05-25 1993-05-25 Hitachi, Ltd. Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements
US5329155A (en) * 1990-04-24 1994-07-12 Xerox Corporation Thin film integrated circuit resistor
JP4982921B2 (ja) * 2001-03-05 2012-07-25 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
DE602005001759D1 (de) * 2004-12-16 2007-09-06 St Microelectronics Crolles 2 SRAM-Speicherzelle
TWM322104U (en) * 2007-02-09 2007-11-11 Sin Guang Li Internat Co Ltd Improved structure of solar cell plate
JP5292878B2 (ja) * 2008-03-26 2013-09-18 富士通セミコンダクター株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4959581A (ja) * 1972-06-30 1974-06-10
JPS5010581A (ja) * 1973-05-25 1975-02-03

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
DE2760086C2 (ja) * 1976-07-26 1988-02-18 Hitachi, Ltd., Tokio/Tokyo, Jp
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4209716A (en) * 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4959581A (ja) * 1972-06-30 1974-06-10
JPS5010581A (ja) * 1973-05-25 1975-02-03

Also Published As

Publication number Publication date
JPS5910581B2 (ja) 1984-03-09
EP0002364A1 (en) 1979-06-13
CA1109165A (en) 1981-09-15
EP0002364B1 (en) 1982-04-28
US4326213A (en) 1982-04-20
DE2861770D1 (en) 1982-06-09

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