JPS5453975A - Manufacture for gallium phosphide green light emitting element - Google Patents
Manufacture for gallium phosphide green light emitting elementInfo
- Publication number
- JPS5453975A JPS5453975A JP12003677A JP12003677A JPS5453975A JP S5453975 A JPS5453975 A JP S5453975A JP 12003677 A JP12003677 A JP 12003677A JP 12003677 A JP12003677 A JP 12003677A JP S5453975 A JPS5453975 A JP S5453975A
- Authority
- JP
- Japan
- Prior art keywords
- growing
- concentration
- quartz
- donor
- light emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12003677A JPS5453975A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12003677A JPS5453975A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5453975A true JPS5453975A (en) | 1979-04-27 |
| JPS6136395B2 JPS6136395B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Family
ID=14776309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12003677A Granted JPS5453975A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5453975A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561528A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS561529A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS599983A (ja) * | 1982-07-08 | 1984-01-19 | Sanyo Electric Co Ltd | 燐化ガリウム緑色発光ダイオ−ドの製造方法 |
| JPS5918687A (ja) * | 1982-07-21 | 1984-01-31 | Sanyo Electric Co Ltd | ガリウム燐発光ダイオ−ドの製造方法 |
| JPS5980981A (ja) * | 1982-11-01 | 1984-05-10 | Sanyo Electric Co Ltd | ガリウム燐緑色発光ダイオードの製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0557490A (ja) * | 1991-08-28 | 1993-03-09 | Katsuji Nakasuda | 回収用空鑵圧縮装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
-
1977
- 1977-10-07 JP JP12003677A patent/JPS5453975A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561528A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS561529A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS599983A (ja) * | 1982-07-08 | 1984-01-19 | Sanyo Electric Co Ltd | 燐化ガリウム緑色発光ダイオ−ドの製造方法 |
| JPS5918687A (ja) * | 1982-07-21 | 1984-01-31 | Sanyo Electric Co Ltd | ガリウム燐発光ダイオ−ドの製造方法 |
| JPS5980981A (ja) * | 1982-11-01 | 1984-05-10 | Sanyo Electric Co Ltd | ガリウム燐緑色発光ダイオードの製造方法 |
| JPH05335621A (ja) * | 1982-11-01 | 1993-12-17 | Sanyo Electric Co Ltd | ガリウム燐緑色発光ダイオード |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136395B2 (enrdf_load_stackoverflow) | 1986-08-18 |
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