JPS544346B2 - - Google Patents

Info

Publication number
JPS544346B2
JPS544346B2 JP8407574A JP8407574A JPS544346B2 JP S544346 B2 JPS544346 B2 JP S544346B2 JP 8407574 A JP8407574 A JP 8407574A JP 8407574 A JP8407574 A JP 8407574A JP S544346 B2 JPS544346 B2 JP S544346B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8407574A
Other languages
Japanese (ja)
Other versions
JPS5044181A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5044181A publication Critical patent/JPS5044181A/ja
Publication of JPS544346B2 publication Critical patent/JPS544346B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8407574A 1973-07-23 1974-07-22 Expired JPS544346B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US381500A US3884642A (en) 1973-07-23 1973-07-23 Radiantly heated crystal growing furnace

Publications (2)

Publication Number Publication Date
JPS5044181A JPS5044181A (enrdf_load_stackoverflow) 1975-04-21
JPS544346B2 true JPS544346B2 (enrdf_load_stackoverflow) 1979-03-06

Family

ID=23505276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8407574A Expired JPS544346B2 (enrdf_load_stackoverflow) 1973-07-23 1974-07-22

Country Status (2)

Country Link
US (1) US3884642A (enrdf_load_stackoverflow)
JP (1) JPS544346B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162293A (en) * 1974-03-27 1979-07-24 Siemens Aktiengesellschaft Apparatus for preparation of a compound or an alloy
DE2414888C2 (de) * 1974-03-27 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Einrichtung zur Temperaturmessung
DE2414776C2 (de) * 1974-03-27 1984-04-19 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Verbindung oder Legierung
DE2414856C2 (de) * 1974-03-27 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
KR930006955B1 (ko) * 1990-12-07 1993-07-24 한국과학기술연구원 디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6139627A (en) * 1998-09-21 2000-10-31 The University Of Akron Transparent multi-zone crystal growth furnace and method for controlling the same
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
NL112210C (enrdf_load_stackoverflow) * 1959-04-30
NL145151B (nl) * 1965-08-05 1975-03-17 Tno Werkwijze en inrichting voor zonesmelten.
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure

Also Published As

Publication number Publication date
JPS5044181A (enrdf_load_stackoverflow) 1975-04-21
US3884642A (en) 1975-05-20

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