JPS5441369B2 - - Google Patents
Info
- Publication number
- JPS5441369B2 JPS5441369B2 JP4895375A JP4895375A JPS5441369B2 JP S5441369 B2 JPS5441369 B2 JP S5441369B2 JP 4895375 A JP4895375 A JP 4895375A JP 4895375 A JP4895375 A JP 4895375A JP S5441369 B2 JPS5441369 B2 JP S5441369B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50048953A JPS51123531A (en) | 1975-04-22 | 1975-04-22 | Diode memory |
| GB16302/76A GB1543971A (en) | 1975-04-22 | 1976-04-22 | Dynamic type semiconductor memory device |
| US05/679,177 US4044342A (en) | 1975-04-22 | 1976-04-22 | Dynamic type semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50048953A JPS51123531A (en) | 1975-04-22 | 1975-04-22 | Diode memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51123531A JPS51123531A (en) | 1976-10-28 |
| JPS5441369B2 true JPS5441369B2 (US07655688-20100202-C00086.png) | 1979-12-07 |
Family
ID=12817628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50048953A Granted JPS51123531A (en) | 1975-04-22 | 1975-04-22 | Diode memory |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4044342A (US07655688-20100202-C00086.png) |
| JP (1) | JPS51123531A (US07655688-20100202-C00086.png) |
| GB (1) | GB1543971A (US07655688-20100202-C00086.png) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4151610A (en) * | 1976-03-16 | 1979-04-24 | Tokyo Shibaura Electric Co., Ltd. | High density semiconductor memory device formed in a well and having more than one capacitor |
| US5359562A (en) * | 1976-07-26 | 1994-10-25 | Hitachi, Ltd. | Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry |
| US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
| US4910709A (en) * | 1988-08-10 | 1990-03-20 | International Business Machines Corporation | Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell |
| US5793668A (en) * | 1997-06-06 | 1998-08-11 | Timeplex, Inc. | Method and apparatus for using parasitic capacitances of a printed circuit board as a temporary data storage medium working with a remote device |
| US5995433A (en) * | 1998-05-22 | 1999-11-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-transistor type DRAM with a refresh circuit |
| JP2006179109A (ja) * | 2004-12-22 | 2006-07-06 | Matsushita Electric Ind Co Ltd | メモリ回路 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3955181A (en) * | 1974-11-19 | 1976-05-04 | Texas Instruments Incorporated | Self-refreshing random access memory cell |
-
1975
- 1975-04-22 JP JP50048953A patent/JPS51123531A/ja active Granted
-
1976
- 1976-04-22 US US05/679,177 patent/US4044342A/en not_active Expired - Lifetime
- 1976-04-22 GB GB16302/76A patent/GB1543971A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51123531A (en) | 1976-10-28 |
| GB1543971A (en) | 1979-04-11 |
| US4044342A (en) | 1977-08-23 |
