JPS542066B2 - - Google Patents
Info
- Publication number
- JPS542066B2 JPS542066B2 JP3257474A JP3257474A JPS542066B2 JP S542066 B2 JPS542066 B2 JP S542066B2 JP 3257474 A JP3257474 A JP 3257474A JP 3257474 A JP3257474 A JP 3257474A JP S542066 B2 JPS542066 B2 JP S542066B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3257474A JPS542066B2 (US06589383-20030708-C00041.png) | 1974-03-25 | 1974-03-25 | |
US05/560,880 US3968019A (en) | 1974-03-25 | 1975-03-21 | Method of manufacturing low power loss semiconductor device |
NL7503480A NL7503480A (nl) | 1974-03-25 | 1975-03-24 | Werkwijze voor het vervaardigen van een half- geleider-inrichting met laag vermogensverlies. |
DE19752512951 DE2512951A1 (de) | 1974-03-25 | 1975-03-24 | Verfahren zur herstellung eines halbleiterbauelementes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3257474A JPS542066B2 (US06589383-20030708-C00041.png) | 1974-03-25 | 1974-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50132865A JPS50132865A (US06589383-20030708-C00041.png) | 1975-10-21 |
JPS542066B2 true JPS542066B2 (US06589383-20030708-C00041.png) | 1979-02-01 |
Family
ID=12362650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3257474A Expired JPS542066B2 (US06589383-20030708-C00041.png) | 1974-03-25 | 1974-03-25 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3968019A (US06589383-20030708-C00041.png) |
JP (1) | JPS542066B2 (US06589383-20030708-C00041.png) |
DE (1) | DE2512951A1 (US06589383-20030708-C00041.png) |
NL (1) | NL7503480A (US06589383-20030708-C00041.png) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4039416A (en) * | 1975-04-21 | 1977-08-02 | White Gerald W | Gasless ion plating |
DE2631881C2 (de) * | 1975-07-18 | 1982-11-25 | Futaba Denshi Kogyo K.K., Mobara, Chiba | Verfahren zur Herstellung eines Halbleiterbauelementes |
JPS5458636A (en) * | 1977-10-20 | 1979-05-11 | Kawasaki Heavy Ind Ltd | Ion nitriding method |
FR2413780A1 (fr) * | 1977-12-29 | 1979-07-27 | Thomson Csf | Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede |
US4135998A (en) * | 1978-04-26 | 1979-01-23 | International Business Machines Corp. | Method for forming pt-si schottky barrier contact |
USRE30401E (en) * | 1978-07-07 | 1980-09-09 | Illinois Tool Works Inc. | Gasless ion plating |
JP2515731B2 (ja) * | 1985-10-25 | 1996-07-10 | 株式会社日立製作所 | 薄膜形成装置および薄膜形成方法 |
US4687537A (en) * | 1986-04-15 | 1987-08-18 | Rca Corporation | Epitaxial metal silicide layers |
JPH07114218B2 (ja) * | 1991-01-09 | 1995-12-06 | 株式会社東芝 | 微小箇所の電気接続方法及び該方法により形成された半導体装置 |
DE19943064B4 (de) * | 1999-09-09 | 2013-01-31 | Robert Bosch Gmbh | Verfahren zur epitaktischen Abscheidung von Atomen oder Molekülen aus einem Reaktivgas auf einer Abscheidungsoberfläche eines Substrats |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3451912A (en) * | 1966-07-15 | 1969-06-24 | Ibm | Schottky-barrier diode formed by sputter-deposition processes |
US3832232A (en) * | 1970-03-13 | 1974-08-27 | Siemens Ag | Process for producing contact metal layers consisting of aluminum alloy on semiconductor components |
US3855612A (en) * | 1972-01-03 | 1974-12-17 | Signetics Corp | Schottky barrier diode semiconductor structure and method |
-
1974
- 1974-03-25 JP JP3257474A patent/JPS542066B2/ja not_active Expired
-
1975
- 1975-03-21 US US05/560,880 patent/US3968019A/en not_active Expired - Lifetime
- 1975-03-24 DE DE19752512951 patent/DE2512951A1/de active Pending
- 1975-03-24 NL NL7503480A patent/NL7503480A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7503480A (nl) | 1975-09-29 |
DE2512951A1 (de) | 1975-10-02 |
US3968019A (en) | 1976-07-06 |
JPS50132865A (US06589383-20030708-C00041.png) | 1975-10-21 |