JPS54162488A - Semiconductor logic circuit device of electrostatic induction type - Google Patents

Semiconductor logic circuit device of electrostatic induction type

Info

Publication number
JPS54162488A
JPS54162488A JP7174178A JP7174178A JPS54162488A JP S54162488 A JPS54162488 A JP S54162488A JP 7174178 A JP7174178 A JP 7174178A JP 7174178 A JP7174178 A JP 7174178A JP S54162488 A JPS54162488 A JP S54162488A
Authority
JP
Japan
Prior art keywords
region
gate
electrostatic induction
induction type
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7174178A
Other languages
Japanese (ja)
Other versions
JPS6129549B2 (en
Inventor
Koichi Kijima
Shigeo Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7174178A priority Critical patent/JPS54162488A/en
Publication of JPS54162488A publication Critical patent/JPS54162488A/en
Publication of JPS6129549B2 publication Critical patent/JPS6129549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To eliminate time lag during OFF operation by making it possible to nearly ignore a-few-carrier injection and accumulation effect, by composing a gate region, constituting an electrostatic induction type transistor, of a Schottky junction. CONSTITUTION:In N<->-type layer 2, metal layer 9 forming a Schottky junction with layer 2 is provided surrounding N<+> region 4 and coming in resistance contact with P-type region 5. This Schottky junction serves as the gate of electrostatic induction type transistor SIT. This constitution has a potential barrier formed against gates 9 at both sides of channel region 2 and when the potential of the gate is zero, no electron flows from source region 1 to drain region 4. Applying a positive potential to gate region 5, on the other hand, moves a depletion layer backward to lower the potential barrier of channel region 2, so that electrons will flow from region 1 to region 4. In this case, since holes hardly intrude into channel region 2, no carrier is accumulated and the time delay of OFF operation never occurs, so that high-speed operation will become possible.
JP7174178A 1978-06-13 1978-06-13 Semiconductor logic circuit device of electrostatic induction type Granted JPS54162488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7174178A JPS54162488A (en) 1978-06-13 1978-06-13 Semiconductor logic circuit device of electrostatic induction type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7174178A JPS54162488A (en) 1978-06-13 1978-06-13 Semiconductor logic circuit device of electrostatic induction type

Publications (2)

Publication Number Publication Date
JPS54162488A true JPS54162488A (en) 1979-12-24
JPS6129549B2 JPS6129549B2 (en) 1986-07-07

Family

ID=13469242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7174178A Granted JPS54162488A (en) 1978-06-13 1978-06-13 Semiconductor logic circuit device of electrostatic induction type

Country Status (1)

Country Link
JP (1) JPS54162488A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292468A (en) * 1975-12-09 1977-08-03 Handotai Kenkyu Shinkokai Ic having inverted electrostatic induction transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292468A (en) * 1975-12-09 1977-08-03 Handotai Kenkyu Shinkokai Ic having inverted electrostatic induction transistor

Also Published As

Publication number Publication date
JPS6129549B2 (en) 1986-07-07

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