JPS541613B2 - - Google Patents

Info

Publication number
JPS541613B2
JPS541613B2 JP6001276A JP6001276A JPS541613B2 JP S541613 B2 JPS541613 B2 JP S541613B2 JP 6001276 A JP6001276 A JP 6001276A JP 6001276 A JP6001276 A JP 6001276A JP S541613 B2 JPS541613 B2 JP S541613B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6001276A
Other versions
JPS52143755A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6001276A priority Critical patent/JPS52143755A/ja
Priority to US05/799,928 priority patent/US4177372A/en
Priority to NL7705780A priority patent/NL7705780A/xx
Priority to GB22047/77A priority patent/GB1575440A/en
Priority to DE2723915A priority patent/DE2723915B2/de
Publication of JPS52143755A publication Critical patent/JPS52143755A/ja
Publication of JPS541613B2 publication Critical patent/JPS541613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
JP6001276A 1976-05-26 1976-05-26 Laser, zone melting device Granted JPS52143755A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6001276A JPS52143755A (en) 1976-05-26 1976-05-26 Laser, zone melting device
US05/799,928 US4177372A (en) 1976-05-26 1977-05-24 Method and apparatus for laser zone melting
NL7705780A NL7705780A (nl) 1976-05-26 1977-05-25 Werkwijze en inrichting voor zonesmelten, ge- bruikmakend van een laser.
GB22047/77A GB1575440A (en) 1976-05-26 1977-05-25 Laser zone melting
DE2723915A DE2723915B2 (de) 1976-05-26 1977-05-26 Verfahren und Vorrichtung zum Zonenschmelzen einer Dünnschicht

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6001276A JPS52143755A (en) 1976-05-26 1976-05-26 Laser, zone melting device

Publications (2)

Publication Number Publication Date
JPS52143755A JPS52143755A (en) 1977-11-30
JPS541613B2 true JPS541613B2 (ja) 1979-01-26

Family

ID=13129720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6001276A Granted JPS52143755A (en) 1976-05-26 1976-05-26 Laser, zone melting device

Country Status (5)

Country Link
US (1) US4177372A (ja)
JP (1) JPS52143755A (ja)
DE (1) DE2723915B2 (ja)
GB (1) GB1575440A (ja)
NL (1) NL7705780A (ja)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32056E (en) * 1977-10-19 1985-12-24 Baxter Travenol Laboratories, Inc. Method of forming a connection between two sealed conduits using radiant energy
JPS55100295A (en) * 1979-01-24 1980-07-31 Nippon Telegr & Teleph Corp <Ntt> Production of single crystal thin film
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
LU82690A1 (fr) * 1980-08-05 1982-05-10 Lucien D Laude Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus
US4374678A (en) * 1981-06-01 1983-02-22 Texas Instruments Incorporated Process for forming HgCoTe alloys selectively by IR illumination
JPS5839012A (ja) * 1981-08-31 1983-03-07 Fujitsu Ltd 非単結晶半導体層の単結晶化方法
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
US4468279A (en) * 1982-08-16 1984-08-28 Avco Everett Research Laboratory, Inc. Method for laser melting of silicon
US4853076A (en) * 1983-12-29 1989-08-01 Massachusetts Institute Of Technology Semiconductor thin films
US4725709A (en) * 1984-09-25 1988-02-16 Siemens Aktiengesellschaft Apparatus having a sweep arrangement for non-contacting modification of an article
JPS61131524A (ja) * 1984-11-30 1986-06-19 Yokogawa Electric Corp 半導体基板
JPS61136985A (ja) * 1984-12-05 1986-06-24 Nec Corp レ−ザアニ−ル法
DE3445613C1 (de) * 1984-12-14 1985-07-11 Jürgen 6074 Rödermark Wisotzki Verfahren und Vorrichtung zur spanlosen Herstellung schmaler,laenglicher Werkstuecke aus Metall mittels Laserstrahls
AU6563986A (en) * 1985-12-06 1987-06-11 Hughes Technology Pty. Ltd. Laser sawmill
WO1990007789A1 (en) * 1986-04-01 1990-07-12 Masahide Oshita Thin film of intermetallic compound semiconductor and process for its production
FR2604190B1 (fr) * 1986-09-19 1988-12-30 Carre Remy Machine de recristallisation d'une couche mince par zone fondue
FR2610450A1 (fr) * 1987-01-29 1988-08-05 France Etat Dispositif de traitement thermique de plaquettes semi-conductrices
US5322589A (en) * 1989-02-09 1994-06-21 Fujitsu Limited Process and apparatus for recrystallization of semiconductor layer
JPH02290014A (ja) * 1989-02-09 1990-11-29 Fujitsu Ltd ビームアニール方法及び装置並びに半導体装置の製造方法
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
US6975296B1 (en) * 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US5789720A (en) * 1992-12-30 1998-08-04 Westinghouse Electric Corporation Method of repairing a discontinuity on a tube by welding
US5359172A (en) * 1992-12-30 1994-10-25 Westinghouse Electric Corporation Direct tube repair by laser welding
US5664497A (en) * 1994-02-18 1997-09-09 Texas Instruments Incorporated Laser symbolization on copper heat slugs
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6242289B1 (en) 1995-09-08 2001-06-05 Semiconductor Energy Laboratories Co., Ltd. Method for producing semiconductor device
US6902616B1 (en) * 1995-07-19 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for producing semiconductor device
JP3841866B2 (ja) 1996-03-04 2006-11-08 三菱電機株式会社 再結晶化材料の製法、その製造装置および加熱方法
JP2001185503A (ja) * 1999-12-24 2001-07-06 Nec Corp 半導体薄膜改質装置
US6567541B1 (en) * 2000-02-25 2003-05-20 Ahbee 1, L.P. Method and apparatus for adhesion testing of thin film materials
US6531681B1 (en) * 2000-03-27 2003-03-11 Ultratech Stepper, Inc. Apparatus having line source of radiant energy for exposing a substrate
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
CN100508140C (zh) 2001-11-30 2009-07-01 株式会社半导体能源研究所 用于半导体器件的制造方法
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1302156C (zh) * 2002-04-15 2007-02-28 西门子公司 制造单晶结构的方法
US6932865B2 (en) * 2003-04-11 2005-08-23 Lockheed Martin Corporation System and method of making single-crystal structures through free-form fabrication techniques
US7301149B2 (en) * 2004-05-06 2007-11-27 The Board Of Trustees Of The University Of Illinois Apparatus and method for determining a thickness of a deposited material
ES2294919B1 (es) * 2006-03-07 2009-02-16 Consejo Superior Investig. Cientificas Horno continuo con laser acoplado para el tratamiento superficial de materiales.
JP4549996B2 (ja) * 2006-03-30 2010-09-22 株式会社日本製鋼所 レーザ照射装置
TW201001624A (en) * 2008-01-24 2010-01-01 Soligie Inc Silicon thin film transistors, systems, and methods of making same
US20090191348A1 (en) * 2008-01-25 2009-07-30 Henry Hieslmair Zone melt recrystallization for inorganic films
US10463453B2 (en) 2013-09-06 2019-11-05 Ormco Corporation Orthodontic appliances and methods of making and using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110272A (ja) * 1974-02-06 1975-08-30
JPS5296864A (en) * 1976-02-09 1977-08-15 Motorola Inc Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB919298A (en) * 1960-08-22 1963-02-20 Ass Elect Ind Improvements relating to electronic beam furnaces
US3699649A (en) * 1969-11-05 1972-10-24 Donald A Mcwilliams Method of and apparatus for regulating the resistance of film resistors
US3848104A (en) * 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
US3986391A (en) * 1975-09-22 1976-10-19 Western Electric Company, Inc. Method and apparatus for the real-time monitoring of a continuous weld using stress-wave emission techniques

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110272A (ja) * 1974-02-06 1975-08-30
JPS5296864A (en) * 1976-02-09 1977-08-15 Motorola Inc Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor

Also Published As

Publication number Publication date
GB1575440A (en) 1980-09-24
DE2723915B2 (de) 1979-01-25
JPS52143755A (en) 1977-11-30
NL7705780A (nl) 1977-11-29
DE2723915A1 (de) 1977-12-01
US4177372A (en) 1979-12-04

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