JPS54155482A - Expandable tape wire and preparation apparatus - Google Patents
Expandable tape wire and preparation apparatusInfo
- Publication number
- JPS54155482A JPS54155482A JP6450378A JP6450378A JPS54155482A JP S54155482 A JPS54155482 A JP S54155482A JP 6450378 A JP6450378 A JP 6450378A JP 6450378 A JP6450378 A JP 6450378A JP S54155482 A JPS54155482 A JP S54155482A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- moving pins
- many
- waveform shaping
- tape wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Insulated Conductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6450378A JPS6051213B2 (ja) | 1978-05-30 | 1978-05-30 | 伸縮自在なテ−プ電線の製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6450378A JPS6051213B2 (ja) | 1978-05-30 | 1978-05-30 | 伸縮自在なテ−プ電線の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54155482A true JPS54155482A (en) | 1979-12-07 |
JPS6051213B2 JPS6051213B2 (ja) | 1985-11-13 |
Family
ID=13260061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6450378A Expired JPS6051213B2 (ja) | 1978-05-30 | 1978-05-30 | 伸縮自在なテ−プ電線の製造装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6051213B2 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
US6902964B2 (en) | 2001-10-24 | 2005-06-07 | Cree, Inc. | Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
US6956239B2 (en) | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
US7265399B2 (en) | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
US7326962B2 (en) | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
US7348612B2 (en) | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US7402844B2 (en) | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
US7646043B2 (en) | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
US8203185B2 (en) | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
JP2015207585A (ja) * | 2014-04-17 | 2015-11-19 | 日本メクトロン株式会社 | フレキシブルプリント基板の製造方法、基板製造用治具および基板製造装置 |
-
1978
- 1978-05-30 JP JP6450378A patent/JPS6051213B2/ja not_active Expired
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7067361B2 (en) | 2000-05-10 | 2006-06-27 | Cree, Inc. | Methods of fabricating silicon carbide metal-semiconductor field effect transistors |
US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
US6902964B2 (en) | 2001-10-24 | 2005-06-07 | Cree, Inc. | Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
US6906350B2 (en) | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
US7297580B2 (en) | 2002-11-26 | 2007-11-20 | Cree, Inc. | Methods of fabricating transistors having buried p-type layers beneath the source region |
US6956239B2 (en) | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
US7265399B2 (en) | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
US7348612B2 (en) | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US7326962B2 (en) | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
US8203185B2 (en) | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
US7402844B2 (en) | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
US7646043B2 (en) | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
US7943972B2 (en) | 2006-09-28 | 2011-05-17 | Cree, Inc. | Methods of fabricating transistors having buried P-type layers coupled to the gate |
JP2015207585A (ja) * | 2014-04-17 | 2015-11-19 | 日本メクトロン株式会社 | フレキシブルプリント基板の製造方法、基板製造用治具および基板製造装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6051213B2 (ja) | 1985-11-13 |
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