JPS54142057A - Logic circuit - Google Patents
Logic circuitInfo
- Publication number
- JPS54142057A JPS54142057A JP5085878A JP5085878A JPS54142057A JP S54142057 A JPS54142057 A JP S54142057A JP 5085878 A JP5085878 A JP 5085878A JP 5085878 A JP5085878 A JP 5085878A JP S54142057 A JPS54142057 A JP S54142057A
- Authority
- JP
- Japan
- Prior art keywords
- level
- signal
- node
- becomes
- rpc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
Abstract
PURPOSE:To avoid the malfunction caused by attenuation of the charging level for the RAM circuit by connecting the MOS transistors (MOST) featuring different current capacity in parallel between the power source and one node of the circuit and then controlling the MOST's with the signals of different timing to each other. CONSTITUTION:When RAM basic clock inverse phiTTL shifts to the H-level and enters the reset precharge RPC period, RPC timing signal P becomes the H-level. And at the same time, one-shot RPC timing signal P0 featuring a shorter H-level period than signal P becomes the H-level in synchronization with signal P. The gates of MOSTQ10 and Q11 connected in parallel between node 6 and the earth are controlled by signal P0 and P each. Also, the gates of MOSTQ12 and Q14 connected in parallel between node 7 and power source VDD are controlled by signal P0 and P. As a result, active timing signal phi1 becomes the L-level. When signal inversion phiTTL becomes the L-level and enters the active period, the attenuation of the charging level is prevented at node 7 since the current capacity of MOST11 and 14 are set smaller than those of MOST10 and 12. Thus, a quick rise is secured for signal phi1, accordingly obtaining the steady operation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5085878A JPS54142057A (en) | 1978-04-27 | 1978-04-27 | Logic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5085878A JPS54142057A (en) | 1978-04-27 | 1978-04-27 | Logic circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54142057A true JPS54142057A (en) | 1979-11-05 |
Family
ID=12870413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5085878A Pending JPS54142057A (en) | 1978-04-27 | 1978-04-27 | Logic circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54142057A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07154240A (en) * | 1993-10-08 | 1995-06-16 | Nec Corp | Semiconductor integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5334438A (en) * | 1976-09-10 | 1978-03-31 | Nec Corp | Semiconductor circuit using insulating gate type field effect transistor |
-
1978
- 1978-04-27 JP JP5085878A patent/JPS54142057A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5334438A (en) * | 1976-09-10 | 1978-03-31 | Nec Corp | Semiconductor circuit using insulating gate type field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07154240A (en) * | 1993-10-08 | 1995-06-16 | Nec Corp | Semiconductor integrated circuit |
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