JPS54133889A - Manufacture of gallium-phosphide green luminous element - Google Patents
Manufacture of gallium-phosphide green luminous elementInfo
- Publication number
- JPS54133889A JPS54133889A JP4153878A JP4153878A JPS54133889A JP S54133889 A JPS54133889 A JP S54133889A JP 4153878 A JP4153878 A JP 4153878A JP 4153878 A JP4153878 A JP 4153878A JP S54133889 A JPS54133889 A JP S54133889A
- Authority
- JP
- Japan
- Prior art keywords
- donor
- crystal
- concentration
- solution
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000274 adsorptive effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4153878A JPS54133889A (en) | 1978-04-08 | 1978-04-08 | Manufacture of gallium-phosphide green luminous element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4153878A JPS54133889A (en) | 1978-04-08 | 1978-04-08 | Manufacture of gallium-phosphide green luminous element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54133889A true JPS54133889A (en) | 1979-10-17 |
| JPS6136397B2 JPS6136397B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-18 |
Family
ID=12611185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4153878A Granted JPS54133889A (en) | 1978-04-08 | 1978-04-08 | Manufacture of gallium-phosphide green luminous element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54133889A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
-
1978
- 1978-04-08 JP JP4153878A patent/JPS54133889A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136397B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS559467A (en) | Epitaxial wafer | |
| JPS549592A (en) | Luminous semiconductor element | |
| JPS54133889A (en) | Manufacture of gallium-phosphide green luminous element | |
| JPS5453975A (en) | Manufacture for gallium phosphide green light emitting element | |
| JPS5453974A (en) | Manufacture for gallium phosphide green light emitting element | |
| JPS5577131A (en) | Vapor phase growth of compound semiconductor epitaxial film | |
| JPS5453977A (en) | Manufacture for gallium phosphide green light emitting element | |
| JPS5460858A (en) | Manufacture of gallium arsenide crystal wafer | |
| JPS5453976A (en) | Gallium phosphide green light emitting element | |
| JPS5683933A (en) | Liquid phase epitaxial growth | |
| JPS5251865A (en) | Vapor growth of group iii-v compound semiconductor crystal | |
| JPS5562727A (en) | Diffusing method of n-type impurity | |
| JPS54154269A (en) | Liquid-phase growth method | |
| JPS5575272A (en) | Solar battery | |
| JPS5595318A (en) | Production of amorphous film | |
| JPS54104773A (en) | Growth method and its unit for semiconductor crystal | |
| JPS52154347A (en) | Low temperature single crystal thin film growth method | |
| JPS5670676A (en) | Luminous diode | |
| JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
| JPS52114268A (en) | Selective liquid growing method | |
| JPS54133093A (en) | Manufacture for gallium phosphide green color light emitting element | |
| JPS5254385A (en) | Production of semiconductor light emitting device | |
| JPS54162451A (en) | Heat treatment method of compound semiconductor and its heat treatment unit | |
| JPS53119297A (en) | Liquid phase growh method of gallium phosphide red luminous element | |
| JPS561528A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |