JPS54104292A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54104292A
JPS54104292A JP1116278A JP1116278A JPS54104292A JP S54104292 A JPS54104292 A JP S54104292A JP 1116278 A JP1116278 A JP 1116278A JP 1116278 A JP1116278 A JP 1116278A JP S54104292 A JPS54104292 A JP S54104292A
Authority
JP
Japan
Prior art keywords
layer
sio2 film
poly
crystal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1116278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6256671B2 (enrdf_load_stackoverflow
Inventor
Junji Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1116278A priority Critical patent/JPS54104292A/ja
Publication of JPS54104292A publication Critical patent/JPS54104292A/ja
Publication of JPS6256671B2 publication Critical patent/JPS6256671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP1116278A 1978-02-02 1978-02-02 Manufacture of semiconductor device Granted JPS54104292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1116278A JPS54104292A (en) 1978-02-02 1978-02-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1116278A JPS54104292A (en) 1978-02-02 1978-02-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54104292A true JPS54104292A (en) 1979-08-16
JPS6256671B2 JPS6256671B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=11770333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1116278A Granted JPS54104292A (en) 1978-02-02 1978-02-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54104292A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915387A (enrdf_load_stackoverflow) * 1972-05-18 1974-02-09
JPS5244184A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Mis type semicnductor memory device and process for production of same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915387A (enrdf_load_stackoverflow) * 1972-05-18 1974-02-09
JPS5244184A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Mis type semicnductor memory device and process for production of same

Also Published As

Publication number Publication date
JPS6256671B2 (enrdf_load_stackoverflow) 1987-11-26

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