JPS53674B2 - - Google Patents

Info

Publication number
JPS53674B2
JPS53674B2 JP10492771A JP10492771A JPS53674B2 JP S53674 B2 JPS53674 B2 JP S53674B2 JP 10492771 A JP10492771 A JP 10492771A JP 10492771 A JP10492771 A JP 10492771A JP S53674 B2 JPS53674 B2 JP S53674B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10492771A
Other languages
Japanese (ja)
Other versions
JPS4870486A (US06174465-20010116-C00003.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10492771A priority Critical patent/JPS53674B2/ja
Publication of JPS4870486A publication Critical patent/JPS4870486A/ja
Publication of JPS53674B2 publication Critical patent/JPS53674B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10492771A 1971-12-23 1971-12-23 Expired JPS53674B2 (US06174465-20010116-C00003.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10492771A JPS53674B2 (US06174465-20010116-C00003.png) 1971-12-23 1971-12-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10492771A JPS53674B2 (US06174465-20010116-C00003.png) 1971-12-23 1971-12-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP51074186A Division JPS5242080A (en) 1976-06-23 1976-06-23 Micro channel type insulated gate field effect transistor and process for productin thereof

Publications (2)

Publication Number Publication Date
JPS4870486A JPS4870486A (US06174465-20010116-C00003.png) 1973-09-25
JPS53674B2 true JPS53674B2 (US06174465-20010116-C00003.png) 1978-01-11

Family

ID=14393716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10492771A Expired JPS53674B2 (US06174465-20010116-C00003.png) 1971-12-23 1971-12-23

Country Status (1)

Country Link
JP (1) JPS53674B2 (US06174465-20010116-C00003.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107863A (US06174465-20010116-C00003.png) * 1974-01-30 1975-08-25
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
JPS52138876A (en) * 1975-12-27 1977-11-19 Fujitsu Ltd Production of semiconductor device

Also Published As

Publication number Publication date
JPS4870486A (US06174465-20010116-C00003.png) 1973-09-25

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