JPS5358761A - Vapor phase growth apparatus - Google Patents

Vapor phase growth apparatus

Info

Publication number
JPS5358761A
JPS5358761A JP13509876A JP13509876A JPS5358761A JP S5358761 A JPS5358761 A JP S5358761A JP 13509876 A JP13509876 A JP 13509876A JP 13509876 A JP13509876 A JP 13509876A JP S5358761 A JPS5358761 A JP S5358761A
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth apparatus
vapor
substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13509876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5744010B2 (enrdf_load_stackoverflow
Inventor
Toshiro Kato
Takeyoshi Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13509876A priority Critical patent/JPS5358761A/ja
Publication of JPS5358761A publication Critical patent/JPS5358761A/ja
Publication of JPS5744010B2 publication Critical patent/JPS5744010B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP13509876A 1976-11-08 1976-11-08 Vapor phase growth apparatus Granted JPS5358761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13509876A JPS5358761A (en) 1976-11-08 1976-11-08 Vapor phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13509876A JPS5358761A (en) 1976-11-08 1976-11-08 Vapor phase growth apparatus

Publications (2)

Publication Number Publication Date
JPS5358761A true JPS5358761A (en) 1978-05-26
JPS5744010B2 JPS5744010B2 (enrdf_load_stackoverflow) 1982-09-18

Family

ID=15143778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13509876A Granted JPS5358761A (en) 1976-11-08 1976-11-08 Vapor phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS5358761A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193362A (ja) * 1982-04-30 1983-11-11 Shimadzu Corp プラズマcvd装置
JPS60122795A (ja) * 1983-12-07 1985-07-01 Mitsubishi Metal Corp ダイヤモンドの低圧合成装置
JPS60126833A (ja) * 1983-11-24 1985-07-06 Mitsubishi Electric Corp プラズマエツチング装置
JPS62241336A (ja) * 1986-04-11 1987-10-22 Nec Kyushu Ltd プラズマエツチング装置
JPS62279862A (ja) * 1986-05-28 1987-12-04 Anelva Corp 薄膜形成装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193362A (ja) * 1982-04-30 1983-11-11 Shimadzu Corp プラズマcvd装置
JPS60126833A (ja) * 1983-11-24 1985-07-06 Mitsubishi Electric Corp プラズマエツチング装置
JPS60122795A (ja) * 1983-12-07 1985-07-01 Mitsubishi Metal Corp ダイヤモンドの低圧合成装置
JPS62241336A (ja) * 1986-04-11 1987-10-22 Nec Kyushu Ltd プラズマエツチング装置
JPS62279862A (ja) * 1986-05-28 1987-12-04 Anelva Corp 薄膜形成装置

Also Published As

Publication number Publication date
JPS5744010B2 (enrdf_load_stackoverflow) 1982-09-18

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS5358761A (en) Vapor phase growth apparatus
JPS52107329A (en) Production of carbon fiber
JPS5398775A (en) Gas phase growth unit
JPS5286059A (en) Process for production and apparatus used for process of semiconductor device
JPS542300A (en) Methdo and apparatus for vapor phase growth of magnespinel
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS52114092A (en) Preparation of l-arginine by fermentation process
JPS5333055A (en) Vapor phase growing apparatus of semiconductor crystals
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5331616A (en) Preparation of glycine
JPS51140561A (en) Liquid phase epitaxial growing method
JPS51148093A (en) Process for preparing l-tryptophan by fermentation
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5212151A (en) Process for preparation of alkyladamantane
JPS5325366A (en) Plasma treating method and apparat us
JPS5210893A (en) Process for production of granular fluorite and hydrogen fluoride from the granular fluorite
JPS51139774A (en) Liquid phase growing device
JPS5298474A (en) Vapor phase growth under reduced pressure
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5261958A (en) Method and device for liquid phase crystal crowth
JPS5370669A (en) Liquid phase epitaxial growth apparatus and method
JPS533062A (en) Semiconductor crystal growth apparatus
JPS5382772A (en) Preparation of isoindolinone derivs.