JPS53110378A - Plasma carrying device - Google Patents
Plasma carrying deviceInfo
- Publication number
- JPS53110378A JPS53110378A JP2477777A JP2477777A JPS53110378A JP S53110378 A JPS53110378 A JP S53110378A JP 2477777 A JP2477777 A JP 2477777A JP 2477777 A JP2477777 A JP 2477777A JP S53110378 A JPS53110378 A JP S53110378A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- carrying device
- plasma carrying
- simplify
- ensuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2477777A JPS53110378A (en) | 1977-03-09 | 1977-03-09 | Plasma carrying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2477777A JPS53110378A (en) | 1977-03-09 | 1977-03-09 | Plasma carrying device |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17294883A Division JPS59103341A (ja) | 1983-09-21 | 1983-09-21 | プラズマ処理装置 |
| JP17294683A Division JPS59103331A (ja) | 1983-09-21 | 1983-09-21 | プラズマ処理装置 |
| JP17294783A Division JPS59103340A (ja) | 1983-09-21 | 1983-09-21 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53110378A true JPS53110378A (en) | 1978-09-27 |
| JPS6139730B2 JPS6139730B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-09-05 |
Family
ID=12147595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2477777A Granted JPS53110378A (en) | 1977-03-09 | 1977-03-09 | Plasma carrying device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53110378A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440078A (en) * | 1977-09-06 | 1979-03-28 | Fujitsu Ltd | Ion milling device |
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS59100516A (ja) * | 1982-11-12 | 1984-06-09 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 光電池素子の製造装置及びアセンブリ |
| JP2009130154A (ja) * | 2007-11-26 | 2009-06-11 | Ulvac Japan Ltd | 真空処理装置 |
| CN117105521A (zh) * | 2023-10-25 | 2023-11-24 | 武汉市飞瓴光电科技有限公司 | 一种制备掺杂二氧化硅材料的装置及方法 |
-
1977
- 1977-03-09 JP JP2477777A patent/JPS53110378A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440078A (en) * | 1977-09-06 | 1979-03-28 | Fujitsu Ltd | Ion milling device |
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS59100516A (ja) * | 1982-11-12 | 1984-06-09 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 光電池素子の製造装置及びアセンブリ |
| JP2009130154A (ja) * | 2007-11-26 | 2009-06-11 | Ulvac Japan Ltd | 真空処理装置 |
| CN117105521A (zh) * | 2023-10-25 | 2023-11-24 | 武汉市飞瓴光电科技有限公司 | 一种制备掺杂二氧化硅材料的装置及方法 |
| CN117105521B (zh) * | 2023-10-25 | 2024-01-19 | 武汉市飞瓴光电科技有限公司 | 一种制备掺杂二氧化硅材料的装置及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6139730B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS52131470A (en) | Manufacture of semiconductor device | |
| JPS53110378A (en) | Plasma carrying device | |
| JPS539993A (en) | Ion producing device | |
| JPS5756036A (en) | Plasma chemical vapor phase reactor | |
| JPS52142970A (en) | Plasma treating device | |
| JPS5298475A (en) | Plasma treating apparatus | |
| JPS5384684A (en) | Plasma etching device | |
| JPS5248468A (en) | Process for production of semiconductor device | |
| JPS53114679A (en) | Plasm etching unit | |
| JPS5441665A (en) | Manufacture for semiconductor device | |
| JPS542670A (en) | Plasma etching method | |
| JPS52127761A (en) | Gas plasma etching unit | |
| JPS54866A (en) | Molecular beam crystal growing device | |
| JPS5547381A (en) | Plasma etching method | |
| JPS545386A (en) | Surface processor for wafer | |
| JPS5368070A (en) | Etching method | |
| JPS52141565A (en) | Manufacture of semiconductor unit | |
| JPS543473A (en) | Manufacture of semiconductor device | |
| JPS52112281A (en) | Manufacture of semiconductor | |
| JPS5396673A (en) | Gas plasma etching method for sio2 film | |
| JPS5227368A (en) | Selection etching method | |
| JPS5339872A (en) | Etching method of wafers | |
| JPS51118369A (en) | Manufacturing process for simiconduator unit | |
| JPS5349950A (en) | Semiconductor device | |
| JPS53144274A (en) | Semiconductor device and its manufacture |