JPS53105985A - Conmplementary-type insulating gate field effect transistor - Google Patents

Conmplementary-type insulating gate field effect transistor

Info

Publication number
JPS53105985A
JPS53105985A JP2123677A JP2123677A JPS53105985A JP S53105985 A JPS53105985 A JP S53105985A JP 2123677 A JP2123677 A JP 2123677A JP 2123677 A JP2123677 A JP 2123677A JP S53105985 A JPS53105985 A JP S53105985A
Authority
JP
Japan
Prior art keywords
conmplementary
field effect
effect transistor
gate field
type insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2123677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626659B2 (enrdf_load_stackoverflow
Inventor
Misao Higuchi
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2123677A priority Critical patent/JPS53105985A/ja
Publication of JPS53105985A publication Critical patent/JPS53105985A/ja
Publication of JPS626659B2 publication Critical patent/JPS626659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP2123677A 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor Granted JPS53105985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2123677A JPS53105985A (en) 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2123677A JPS53105985A (en) 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS53105985A true JPS53105985A (en) 1978-09-14
JPS626659B2 JPS626659B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=12049397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2123677A Granted JPS53105985A (en) 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS53105985A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618459A (en) * 1979-07-24 1981-02-21 Itt Monolithic integrated ccmos circuit
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
JPS61185962A (ja) * 1985-02-13 1986-08-19 Nec Corp 相補型ｍｏｓ集積回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191681A (enrdf_load_stackoverflow) * 1975-01-22 1976-08-11
JPS5416652A (en) * 1977-07-07 1979-02-07 Mitsubishi Electric Corp Corrector for load unbalance

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191681A (enrdf_load_stackoverflow) * 1975-01-22 1976-08-11
JPS5416652A (en) * 1977-07-07 1979-02-07 Mitsubishi Electric Corp Corrector for load unbalance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618459A (en) * 1979-07-24 1981-02-21 Itt Monolithic integrated ccmos circuit
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
JPS61185962A (ja) * 1985-02-13 1986-08-19 Nec Corp 相補型ｍｏｓ集積回路

Also Published As

Publication number Publication date
JPS626659B2 (enrdf_load_stackoverflow) 1987-02-12

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