JPS5271140A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5271140A
JPS5271140A JP50146440A JP14644075A JPS5271140A JP S5271140 A JPS5271140 A JP S5271140A JP 50146440 A JP50146440 A JP 50146440A JP 14644075 A JP14644075 A JP 14644075A JP S5271140 A JPS5271140 A JP S5271140A
Authority
JP
Japan
Prior art keywords
memory circuit
memory
differential amplifier
operating point
stable operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50146440A
Other languages
Japanese (ja)
Inventor
Ryoichi Hori
Osamu Minato
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50146440A priority Critical patent/JPS5271140A/en
Publication of JPS5271140A publication Critical patent/JPS5271140A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To obtain a memory with stable operation, by always keeping the operating point of the differential amplifier at a constant condition independently of the memory information.
JP50146440A 1975-12-10 1975-12-10 Memory circuit Pending JPS5271140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50146440A JPS5271140A (en) 1975-12-10 1975-12-10 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50146440A JPS5271140A (en) 1975-12-10 1975-12-10 Memory circuit

Publications (1)

Publication Number Publication Date
JPS5271140A true JPS5271140A (en) 1977-06-14

Family

ID=15407700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50146440A Pending JPS5271140A (en) 1975-12-10 1975-12-10 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5271140A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63201998A (en) * 1987-02-12 1988-08-22 ラムトロン　インターナショナル　コーポレイション Ferrodielectric memory
JPH04146598A (en) * 1990-10-08 1992-05-20 Nec Ic Microcomput Syst Ltd Semiconductor memory
US7672151B1 (en) 1987-06-02 2010-03-02 Ramtron International Corporation Method for reading non-volatile ferroelectric capacitor memory cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63201998A (en) * 1987-02-12 1988-08-22 ラムトロン　インターナショナル　コーポレイション Ferrodielectric memory
US7672151B1 (en) 1987-06-02 2010-03-02 Ramtron International Corporation Method for reading non-volatile ferroelectric capacitor memory cell
US7924599B1 (en) 1987-06-02 2011-04-12 Ramtron International Corporation Non-volatile memory circuit using ferroelectric capacitor storage element
JPH04146598A (en) * 1990-10-08 1992-05-20 Nec Ic Microcomput Syst Ltd Semiconductor memory

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