JPS5266377A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5266377A JPS5266377A JP50143586A JP14358675A JPS5266377A JP S5266377 A JPS5266377 A JP S5266377A JP 50143586 A JP50143586 A JP 50143586A JP 14358675 A JP14358675 A JP 14358675A JP S5266377 A JPS5266377 A JP S5266377A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- layer
- semiconductor
- steam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50143586A JPS5266377A (en) | 1975-11-29 | 1975-11-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50143586A JPS5266377A (en) | 1975-11-29 | 1975-11-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5266377A true JPS5266377A (en) | 1977-06-01 |
| JPS5444595B2 JPS5444595B2 (cs) | 1979-12-26 |
Family
ID=15342168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50143586A Granted JPS5266377A (en) | 1975-11-29 | 1975-11-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5266377A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279777A (en) * | 1975-12-26 | 1977-07-05 | Toshiba Corp | Production of semiconductor device |
| WO1997047046A1 (en) * | 1996-06-06 | 1997-12-11 | Seiko Epson Corporation | Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615942A (en) * | 1969-06-05 | 1971-10-26 | Rca Corp | Method of making a phosphorus glass passivated transistor |
-
1975
- 1975-11-29 JP JP50143586A patent/JPS5266377A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615942A (en) * | 1969-06-05 | 1971-10-26 | Rca Corp | Method of making a phosphorus glass passivated transistor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279777A (en) * | 1975-12-26 | 1977-07-05 | Toshiba Corp | Production of semiconductor device |
| WO1997047046A1 (en) * | 1996-06-06 | 1997-12-11 | Seiko Epson Corporation | Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
| US6146928A (en) * | 1996-06-06 | 2000-11-14 | Seiko Epson Corporation | Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
| KR100381828B1 (ko) * | 1996-06-06 | 2003-08-25 | 세이코 엡슨 가부시키가이샤 | 박막트랜지스터제조방법,그것을사용한액정표시장치및전자기기 |
| CN100392867C (zh) * | 1996-06-06 | 2008-06-04 | 精工爱普生株式会社 | 薄膜晶体管的制造方法、使用该方法的液晶显示装置和电子设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5444595B2 (cs) | 1979-12-26 |
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