JPS5264889A - Formation of layer composed of gal-zalzasi-xsbw - Google Patents

Formation of layer composed of gal-zalzasi-xsbw

Info

Publication number
JPS5264889A
JPS5264889A JP14093675A JP14093675A JPS5264889A JP S5264889 A JPS5264889 A JP S5264889A JP 14093675 A JP14093675 A JP 14093675A JP 14093675 A JP14093675 A JP 14093675A JP S5264889 A JPS5264889 A JP S5264889A
Authority
JP
Japan
Prior art keywords
zalzasi
xsbw
gal
formation
layer composed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14093675A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5248474B2 (enrdf_load_stackoverflow
Inventor
Koichi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14093675A priority Critical patent/JPS5264889A/ja
Publication of JPS5264889A publication Critical patent/JPS5264889A/ja
Publication of JPS5248474B2 publication Critical patent/JPS5248474B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
JP14093675A 1975-11-25 1975-11-25 Formation of layer composed of gal-zalzasi-xsbw Granted JPS5264889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14093675A JPS5264889A (en) 1975-11-25 1975-11-25 Formation of layer composed of gal-zalzasi-xsbw

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14093675A JPS5264889A (en) 1975-11-25 1975-11-25 Formation of layer composed of gal-zalzasi-xsbw

Publications (2)

Publication Number Publication Date
JPS5264889A true JPS5264889A (en) 1977-05-28
JPS5248474B2 JPS5248474B2 (enrdf_load_stackoverflow) 1977-12-09

Family

ID=15280250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14093675A Granted JPS5264889A (en) 1975-11-25 1975-11-25 Formation of layer composed of gal-zalzasi-xsbw

Country Status (1)

Country Link
JP (1) JPS5264889A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434788U (enrdf_load_stackoverflow) * 1977-08-11 1979-03-07

Also Published As

Publication number Publication date
JPS5248474B2 (enrdf_load_stackoverflow) 1977-12-09

Similar Documents

Publication Publication Date Title
JPS5317066A (en) Vapor phase epitaxial growth method
JPS5264889A (en) Formation of layer composed of gal-zalzasi-xsbw
JPS526093A (en) Production method of semiconductor device
JPS5317067A (en) Vapor phase epitaxial growth method
JPS52152184A (en) Semiconductor device
JPS5269284A (en) Semiconductor device
JPS535569A (en) Liquid-phase epitaxial growth method
JPS5284964A (en) Vapor phase growth method for semiconductors
JPS52127189A (en) Semiconductor device
JPS5274285A (en) Production of semiconductor device
JPS5254385A (en) Production of semiconductor light emitting device
JPS52146582A (en) Compound semiconductor light emitting device
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5263067A (en) Production of semiconductor device
JPS52116067A (en) Gas discharge panel
JPS5376981A (en) Gas phase growth method
JPS52146550A (en) Production of semiconductor device
JPS5348669A (en) Growth method of semiconductor crystal
JPS5333569A (en) Method of reducing lattice defects of single crystal
JPS52146583A (en) Visible light emitting laser device
JPS5585093A (en) Injection-type laser
JPS51132799A (en) Composite superconductive wire-materials
JPS5416177A (en) Crystal growth method
JPS5295189A (en) Gallium arsenide luminous element
JPS5373990A (en) Semiconductor device