JPS5260989A - Manufacturing of dielectric thin film - Google Patents

Manufacturing of dielectric thin film

Info

Publication number
JPS5260989A
JPS5260989A JP50136953A JP13695375A JPS5260989A JP S5260989 A JPS5260989 A JP S5260989A JP 50136953 A JP50136953 A JP 50136953A JP 13695375 A JP13695375 A JP 13695375A JP S5260989 A JPS5260989 A JP S5260989A
Authority
JP
Japan
Prior art keywords
thin film
dielectric thin
manufacturing
ionization
tio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50136953A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5619928B2 (enrdf_load_stackoverflow
Inventor
Tsuneo Mitsuyu
Kiyotaka Wasa
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50136953A priority Critical patent/JPS5260989A/ja
Publication of JPS5260989A publication Critical patent/JPS5260989A/ja
Publication of JPS5619928B2 publication Critical patent/JPS5619928B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP50136953A 1975-11-13 1975-11-13 Manufacturing of dielectric thin film Granted JPS5260989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50136953A JPS5260989A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50136953A JPS5260989A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Publications (2)

Publication Number Publication Date
JPS5260989A true JPS5260989A (en) 1977-05-19
JPS5619928B2 JPS5619928B2 (enrdf_load_stackoverflow) 1981-05-11

Family

ID=15187356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50136953A Granted JPS5260989A (en) 1975-11-13 1975-11-13 Manufacturing of dielectric thin film

Country Status (1)

Country Link
JP (1) JPS5260989A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702791A (en) * 1985-07-16 1987-10-27 Kokusai Denshin Denwa Kabushiki Kaisha Method for manufacturing bismuth-containing oxide single crystal
US4792463A (en) * 1985-09-17 1988-12-20 Masaru Okada Method of producing ferroelectric thin film
JPS6447851A (en) * 1987-08-18 1989-02-22 Canon Kk Formation of thin bismuth-titanate film
EP1391429A1 (en) * 2002-08-06 2004-02-25 Samsung Electronics Co., Ltd. Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702791A (en) * 1985-07-16 1987-10-27 Kokusai Denshin Denwa Kabushiki Kaisha Method for manufacturing bismuth-containing oxide single crystal
US4792463A (en) * 1985-09-17 1988-12-20 Masaru Okada Method of producing ferroelectric thin film
JPS6447851A (en) * 1987-08-18 1989-02-22 Canon Kk Formation of thin bismuth-titanate film
EP1391429A1 (en) * 2002-08-06 2004-02-25 Samsung Electronics Co., Ltd. Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
US7892917B2 (en) 2002-08-06 2011-02-22 Samsung Electronics Co., Ltd. Method for forming bismuth titanium silicon oxide thin film

Also Published As

Publication number Publication date
JPS5619928B2 (enrdf_load_stackoverflow) 1981-05-11

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