JPS5252378A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5252378A
JPS5252378A JP51118802A JP11880276A JPS5252378A JP S5252378 A JPS5252378 A JP S5252378A JP 51118802 A JP51118802 A JP 51118802A JP 11880276 A JP11880276 A JP 11880276A JP S5252378 A JPS5252378 A JP S5252378A
Authority
JP
Japan
Prior art keywords
semiconductor device
iil
independent
read
type memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51118802A
Other languages
English (en)
Japanese (ja)
Other versions
JPS566149B2 (cs
Inventor
Susumu Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP51118802A priority Critical patent/JPS5252378A/ja
Publication of JPS5252378A publication Critical patent/JPS5252378A/ja
Publication of JPS566149B2 publication Critical patent/JPS566149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP51118802A 1976-10-01 1976-10-01 Semiconductor device Granted JPS5252378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51118802A JPS5252378A (en) 1976-10-01 1976-10-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51118802A JPS5252378A (en) 1976-10-01 1976-10-01 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13655274A Division JPS5435919B2 (cs) 1974-11-26 1974-11-26

Publications (2)

Publication Number Publication Date
JPS5252378A true JPS5252378A (en) 1977-04-27
JPS566149B2 JPS566149B2 (cs) 1981-02-09

Family

ID=14745472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51118802A Granted JPS5252378A (en) 1976-10-01 1976-10-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5252378A (cs)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154379A (cs) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co
JPS5164386A (cs) * 1974-10-09 1976-06-03 Philips Nv
JPS5332234A (en) * 1976-09-07 1978-03-27 Toyota Motor Corp Electronic exhaust gas re-circulation means

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164386A (cs) * 1974-10-09 1976-06-03 Philips Nv
JPS5154379A (cs) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co
JPS5332234A (en) * 1976-09-07 1978-03-27 Toyota Motor Corp Electronic exhaust gas re-circulation means

Also Published As

Publication number Publication date
JPS566149B2 (cs) 1981-02-09

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