JPS5248469B2 - - Google Patents

Info

Publication number
JPS5248469B2
JPS5248469B2 JP14131475A JP14131475A JPS5248469B2 JP S5248469 B2 JPS5248469 B2 JP S5248469B2 JP 14131475 A JP14131475 A JP 14131475A JP 14131475 A JP14131475 A JP 14131475A JP S5248469 B2 JPS5248469 B2 JP S5248469B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14131475A
Other languages
Japanese (ja)
Other versions
JPS5264883A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14131475A priority Critical patent/JPS5264883A/ja
Publication of JPS5264883A publication Critical patent/JPS5264883A/ja
Publication of JPS5248469B2 publication Critical patent/JPS5248469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/866Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP14131475A 1975-11-26 1975-11-26 Semiconductor element Granted JPS5264883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14131475A JPS5264883A (en) 1975-11-26 1975-11-26 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14131475A JPS5264883A (en) 1975-11-26 1975-11-26 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS5264883A JPS5264883A (en) 1977-05-28
JPS5248469B2 true JPS5248469B2 (US07166745-20070123-C00016.png) 1977-12-09

Family

ID=15289008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14131475A Granted JPS5264883A (en) 1975-11-26 1975-11-26 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5264883A (US07166745-20070123-C00016.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454704A1 (fr) * 1979-04-20 1980-11-14 Thomson Csf Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts

Also Published As

Publication number Publication date
JPS5264883A (en) 1977-05-28

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