JPS5244175A - Method of flat etching of silicon substrate - Google Patents

Method of flat etching of silicon substrate

Info

Publication number
JPS5244175A
JPS5244175A JP11977075A JP11977075A JPS5244175A JP S5244175 A JPS5244175 A JP S5244175A JP 11977075 A JP11977075 A JP 11977075A JP 11977075 A JP11977075 A JP 11977075A JP S5244175 A JPS5244175 A JP S5244175A
Authority
JP
Japan
Prior art keywords
silicon substrate
flat etching
etching
flat
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11977075A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5530294B2 (enrdf_load_stackoverflow
Inventor
Masayoshi Yoshimura
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11977075A priority Critical patent/JPS5244175A/ja
Priority to NL7610970A priority patent/NL7610970A/xx
Priority to DE19762644940 priority patent/DE2644940A1/de
Publication of JPS5244175A publication Critical patent/JPS5244175A/ja
Publication of JPS5530294B2 publication Critical patent/JPS5530294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
JP11977075A 1975-10-06 1975-10-06 Method of flat etching of silicon substrate Granted JPS5244175A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11977075A JPS5244175A (en) 1975-10-06 1975-10-06 Method of flat etching of silicon substrate
NL7610970A NL7610970A (nl) 1975-10-06 1976-10-04 Werkwijze voor het vlakmaken van een silicium- substraat door etsen.
DE19762644940 DE2644940A1 (de) 1975-10-06 1976-10-05 Aetzverfahren zum abflachen eines siliciumsubstrats

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11977075A JPS5244175A (en) 1975-10-06 1975-10-06 Method of flat etching of silicon substrate

Publications (2)

Publication Number Publication Date
JPS5244175A true JPS5244175A (en) 1977-04-06
JPS5530294B2 JPS5530294B2 (enrdf_load_stackoverflow) 1980-08-09

Family

ID=14769758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11977075A Granted JPS5244175A (en) 1975-10-06 1975-10-06 Method of flat etching of silicon substrate

Country Status (3)

Country Link
JP (1) JPS5244175A (enrdf_load_stackoverflow)
DE (1) DE2644940A1 (enrdf_load_stackoverflow)
NL (1) NL7610970A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187125A (en) * 1976-12-27 1980-02-05 Raytheon Company Method for manufacturing semiconductor structures by anisotropic and isotropic etching
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
JPS6272974U (enrdf_load_stackoverflow) * 1985-10-28 1987-05-11

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148131U (ja) * 1982-03-30 1983-10-05 住金鋼材工業株式会社 ブラケツト式サポ−ト足場

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148131U (ja) * 1982-03-30 1983-10-05 住金鋼材工業株式会社 ブラケツト式サポ−ト足場

Also Published As

Publication number Publication date
JPS5530294B2 (enrdf_load_stackoverflow) 1980-08-09
NL7610970A (nl) 1977-04-12
DE2644940A1 (de) 1977-04-28

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