JPS5243066B2 - - Google Patents
Info
- Publication number
- JPS5243066B2 JPS5243066B2 JP49059420A JP5942074A JPS5243066B2 JP S5243066 B2 JPS5243066 B2 JP S5243066B2 JP 49059420 A JP49059420 A JP 49059420A JP 5942074 A JP5942074 A JP 5942074A JP S5243066 B2 JPS5243066 B2 JP S5243066B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Landscapes
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US374426A US3874920A (en) | 1973-06-28 | 1973-06-28 | Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5029167A JPS5029167A (https=) | 1975-03-25 |
| JPS5243066B2 true JPS5243066B2 (https=) | 1977-10-28 |
Family
ID=23476767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49059420A Expired JPS5243066B2 (https=) | 1973-06-28 | 1974-05-28 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3874920A (https=) |
| JP (1) | JPS5243066B2 (https=) |
| CA (1) | CA1027025A (https=) |
| DE (1) | DE2430859C3 (https=) |
| FR (1) | FR2234921B1 (https=) |
| GB (1) | GB1455949A (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1089298B (it) * | 1977-01-17 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| US4381213A (en) * | 1980-12-15 | 1983-04-26 | Motorola, Inc. | Partial vacuum boron diffusion process |
| US4356211A (en) * | 1980-12-19 | 1982-10-26 | International Business Machines Corporation | Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon |
| US5213670A (en) * | 1989-06-30 | 1993-05-25 | Siemens Aktiengesellschaft | Method for manufacturing a polycrystalline layer on a substrate |
| JP3119190B2 (ja) * | 1997-01-24 | 2000-12-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| DE102007010563A1 (de) * | 2007-02-22 | 2008-08-28 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1245335B (de) * | 1964-06-26 | 1967-07-27 | Siemens Ag | Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern |
| GB699545A (en) * | 1966-09-08 | 1953-11-11 | Harold Stuart Hallewell | Improvements in forming means for profile grinding wheels |
| US3558374A (en) * | 1968-01-15 | 1971-01-26 | Ibm | Polycrystalline film having controlled grain size and method of making same |
| US3765940A (en) * | 1971-11-08 | 1973-10-16 | Texas Instruments Inc | Vacuum evaporated thin film resistors |
-
1973
- 1973-06-28 US US374426A patent/US3874920A/en not_active Expired - Lifetime
-
1974
- 1974-04-29 FR FR7415810A patent/FR2234921B1/fr not_active Expired
- 1974-05-01 GB GB1902774A patent/GB1455949A/en not_active Expired
- 1974-05-28 JP JP49059420A patent/JPS5243066B2/ja not_active Expired
- 1974-06-04 CA CA201,627A patent/CA1027025A/en not_active Expired
- 1974-06-27 DE DE2430859A patent/DE2430859C3/de not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| SEMICONDUCTOR SILICON=1973US * |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1027025A (en) | 1978-02-28 |
| FR2234921B1 (https=) | 1976-06-25 |
| DE2430859A1 (de) | 1975-01-09 |
| US3874920A (en) | 1975-04-01 |
| JPS5029167A (https=) | 1975-03-25 |
| FR2234921A1 (https=) | 1975-01-24 |
| GB1455949A (en) | 1976-11-17 |
| DE2430859C3 (de) | 1981-10-22 |
| DE2430859B2 (de) | 1980-12-04 |