JPS5233781B2 - - Google Patents

Info

Publication number
JPS5233781B2
JPS5233781B2 JP9241571A JP9241571A JPS5233781B2 JP S5233781 B2 JPS5233781 B2 JP S5233781B2 JP 9241571 A JP9241571 A JP 9241571A JP 9241571 A JP9241571 A JP 9241571A JP S5233781 B2 JPS5233781 B2 JP S5233781B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9241571A
Other versions
JPS4857148A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9241571A priority Critical patent/JPS5233781B2/ja
Publication of JPS4857148A publication Critical patent/JPS4857148A/ja
Publication of JPS5233781B2 publication Critical patent/JPS5233781B2/ja
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085Long tailed pairs
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45476Indexing scheme relating to differential amplifiers the CSC comprising a mirror circuit
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45611Indexing scheme relating to differential amplifiers the IC comprising only one input signal connection lead for one phase of the signal
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45622Indexing scheme relating to differential amplifiers the IC comprising a voltage generating circuit
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45701Indexing scheme relating to differential amplifiers the LC comprising one resistor
JP9241571A 1971-11-19 1971-11-19 Expired JPS5233781B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9241571A JPS5233781B2 (en) 1971-11-19 1971-11-19

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9241571A JPS5233781B2 (en) 1971-11-19 1971-11-19
FR7239511A FR2160409B1 (en) 1971-11-19 1972-11-08
DE19722256595 DE2256595A1 (en) 1971-11-19 1972-11-17 Constant current circuit
NL7215568A NL7215568A (en) 1971-11-19 1972-11-17

Publications (2)

Publication Number Publication Date
JPS4857148A JPS4857148A (en) 1973-08-10
JPS5233781B2 true JPS5233781B2 (en) 1977-08-30

Family

ID=14053772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9241571A Expired JPS5233781B2 (en) 1971-11-19 1971-11-19

Country Status (4)

Country Link
JP (1) JPS5233781B2 (en)
DE (1) DE2256595A1 (en)
FR (1) FR2160409B1 (en)
NL (1) NL7215568A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077013A (en) * 1983-08-27 1985-05-01 Kammann Maschf Werner Ornamenting device for article
JPH0128997Y2 (en) * 1984-10-15 1989-09-04

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61644B2 (en) * 1977-12-14 1986-01-10 Sony Corp

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391311A (en) * 1966-02-07 1968-07-02 Westinghouse Electric Corp Constant current gain composite transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077013A (en) * 1983-08-27 1985-05-01 Kammann Maschf Werner Ornamenting device for article
JPH0128997Y2 (en) * 1984-10-15 1989-09-04

Also Published As

Publication number Publication date
NL7215568A (en) 1973-05-22
FR2160409B1 (en) 1977-01-14
DE2256595A1 (en) 1973-06-07
FR2160409A1 (en) 1973-06-29
JPS4857148A (en) 1973-08-10

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