JPS5225295B2 - - Google Patents

Info

Publication number
JPS5225295B2
JPS5225295B2 JP5420073A JP5420073A JPS5225295B2 JP S5225295 B2 JPS5225295 B2 JP S5225295B2 JP 5420073 A JP5420073 A JP 5420073A JP 5420073 A JP5420073 A JP 5420073A JP S5225295 B2 JPS5225295 B2 JP S5225295B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5420073A
Other languages
Japanese (ja)
Other versions
JPS4943572A (US06623731-20030923-C00012.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4943572A publication Critical patent/JPS4943572A/ja
Publication of JPS5225295B2 publication Critical patent/JPS5225295B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP5420073A 1972-05-20 1973-05-17 Expired JPS5225295B2 (US06623731-20030923-C00012.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (US06623731-20030923-C00012.png) 1972-05-20 1972-05-20

Publications (2)

Publication Number Publication Date
JPS4943572A JPS4943572A (US06623731-20030923-C00012.png) 1974-04-24
JPS5225295B2 true JPS5225295B2 (US06623731-20030923-C00012.png) 1977-07-06

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5420073A Expired JPS5225295B2 (US06623731-20030923-C00012.png) 1972-05-20 1973-05-17

Country Status (7)

Country Link
JP (1) JPS5225295B2 (US06623731-20030923-C00012.png)
CA (1) CA990626A (US06623731-20030923-C00012.png)
DE (1) DE2324127A1 (US06623731-20030923-C00012.png)
FR (1) FR2185445B1 (US06623731-20030923-C00012.png)
GB (1) GB1406760A (US06623731-20030923-C00012.png)
IT (1) IT985922B (US06623731-20030923-C00012.png)
NL (1) NL7206877A (US06623731-20030923-C00012.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600B1 (en) * 1980-07-28 1984-10-10 Monsanto Company Improved method for producing semiconductor grade silicon
JPS6169116A (ja) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd シリコンウエハ−の連続cvdコ−テイング用サセプター
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
JP6333646B2 (ja) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングBASF Coatings GmbH 二液型塗料組成物及びそれを用いた複層塗膜形成方法

Also Published As

Publication number Publication date
CA990626A (en) 1976-06-08
JPS4943572A (US06623731-20030923-C00012.png) 1974-04-24
NL7206877A (US06623731-20030923-C00012.png) 1973-11-22
DE2324127A1 (de) 1973-12-06
FR2185445A1 (US06623731-20030923-C00012.png) 1974-01-04
FR2185445B1 (US06623731-20030923-C00012.png) 1976-06-11
IT985922B (it) 1974-12-30
GB1406760A (en) 1975-09-17

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