JPS5220830B1 - - Google Patents
Info
- Publication number
- JPS5220830B1 JPS5220830B1 JP41040755A JP4075566A JPS5220830B1 JP S5220830 B1 JPS5220830 B1 JP S5220830B1 JP 41040755 A JP41040755 A JP 41040755A JP 4075566 A JP4075566 A JP 4075566A JP S5220830 B1 JPS5220830 B1 JP S5220830B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46848165A | 1965-06-30 | 1965-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5220830B1 true JPS5220830B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-06-06 |
Family
ID=23859993
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP41040755A Pending JPS5220830B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-06-30 | 1966-06-24 | |
| JP47128266A Pending JPS4941467B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-06-30 | 1972-12-22 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47128266A Pending JPS4941467B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-06-30 | 1972-12-22 |
Country Status (4)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE30251E (en) * | 1967-06-08 | 1980-04-08 | U.S. Philips Corporation | Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
| US3676921A (en) * | 1967-06-08 | 1972-07-18 | Philips Corp | Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
| US3547717A (en) * | 1968-04-29 | 1970-12-15 | Sprague Electric Co | Radiation resistant semiconductive device |
| US3651565A (en) * | 1968-09-09 | 1972-03-28 | Nat Semiconductor Corp | Lateral transistor structure and method of making the same |
| DE1920400A1 (de) * | 1969-04-22 | 1970-11-12 | Siemens Ag | Verfahren zur Herstellung von Feldeffekttransistoren |
| US3627647A (en) * | 1969-05-19 | 1971-12-14 | Cogar Corp | Fabrication method for semiconductor devices |
| US3679941A (en) * | 1969-09-22 | 1972-07-25 | Gen Electric | Composite integrated circuits including semiconductor chips mounted on a common substrate with connections made through a dielectric encapsulator |
| US3714525A (en) * | 1970-03-02 | 1973-01-30 | Gen Electric | Field-effect transistors with self registered gate which acts as diffusion mask during formation |
| US3798512A (en) * | 1970-09-28 | 1974-03-19 | Ibm | Fet device with guard ring and fabrication method therefor |
| US3673679A (en) * | 1970-12-01 | 1972-07-04 | Texas Instruments Inc | Complementary insulated gate field effect devices |
| JPS5714216A (en) * | 1980-06-30 | 1982-01-25 | Mitsubishi Electric Corp | Input protecting circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL267831A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-08-17 | |||
| US3311756A (en) * | 1963-06-24 | 1967-03-28 | Hitachi Seisakusho Tokyoto Kk | Electronic circuit having a fieldeffect transistor therein |
-
1965
- 1965-06-30 US US468481A patent/US3445924A/en not_active Expired - Lifetime
-
1966
- 1966-05-31 GB GB24244/66A patent/GB1074420A/en not_active Expired
- 1966-06-22 FR FR7903A patent/FR1485073A/fr not_active Expired
- 1966-06-24 JP JP41040755A patent/JPS5220830B1/ja active Pending
-
1972
- 1972-12-22 JP JP47128266A patent/JPS4941467B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1074420A (en) | 1967-07-05 |
| US3445924A (en) | 1969-05-27 |
| JPS4941467B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-11-09 |
| FR1485073A (fr) | 1967-06-16 |