JPS52141588A - Semiconductor device and its process - Google Patents

Semiconductor device and its process

Info

Publication number
JPS52141588A
JPS52141588A JP5865176A JP5865176A JPS52141588A JP S52141588 A JPS52141588 A JP S52141588A JP 5865176 A JP5865176 A JP 5865176A JP 5865176 A JP5865176 A JP 5865176A JP S52141588 A JPS52141588 A JP S52141588A
Authority
JP
Japan
Prior art keywords
semiconductor device
emitter
transistor
interface
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5865176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5615585B2 (enrdf_load_stackoverflow
Inventor
Tsutomu Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5865176A priority Critical patent/JPS52141588A/ja
Publication of JPS52141588A publication Critical patent/JPS52141588A/ja
Publication of JPS5615585B2 publication Critical patent/JPS5615585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP5865176A 1976-05-20 1976-05-20 Semiconductor device and its process Granted JPS52141588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5865176A JPS52141588A (en) 1976-05-20 1976-05-20 Semiconductor device and its process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5865176A JPS52141588A (en) 1976-05-20 1976-05-20 Semiconductor device and its process

Publications (2)

Publication Number Publication Date
JPS52141588A true JPS52141588A (en) 1977-11-25
JPS5615585B2 JPS5615585B2 (enrdf_load_stackoverflow) 1981-04-10

Family

ID=13090476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5865176A Granted JPS52141588A (en) 1976-05-20 1976-05-20 Semiconductor device and its process

Country Status (1)

Country Link
JP (1) JPS52141588A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5173886A (en) * 1974-12-23 1976-06-26 Tokyo Shibaura Electric Co Handotaisochitosono seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5173886A (en) * 1974-12-23 1976-06-26 Tokyo Shibaura Electric Co Handotaisochitosono seizohoho

Also Published As

Publication number Publication date
JPS5615585B2 (enrdf_load_stackoverflow) 1981-04-10

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