JPS52133022A - Production of high purity silicon - Google Patents

Production of high purity silicon

Info

Publication number
JPS52133022A
JPS52133022A JP4848876A JP4848876A JPS52133022A JP S52133022 A JPS52133022 A JP S52133022A JP 4848876 A JP4848876 A JP 4848876A JP 4848876 A JP4848876 A JP 4848876A JP S52133022 A JPS52133022 A JP S52133022A
Authority
JP
Japan
Prior art keywords
production
high purity
purity silicon
trichlorosilane
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4848876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5645848B2 (enrdf_load_stackoverflow
Inventor
Fukuhiko Suga
Kenji Tomizawa
Shinichiro Kobayashi
Tomoko Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP4848876A priority Critical patent/JPS52133022A/ja
Publication of JPS52133022A publication Critical patent/JPS52133022A/ja
Publication of JPS5645848B2 publication Critical patent/JPS5645848B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP4848876A 1976-04-30 1976-04-30 Production of high purity silicon Granted JPS52133022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4848876A JPS52133022A (en) 1976-04-30 1976-04-30 Production of high purity silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4848876A JPS52133022A (en) 1976-04-30 1976-04-30 Production of high purity silicon

Publications (2)

Publication Number Publication Date
JPS52133022A true JPS52133022A (en) 1977-11-08
JPS5645848B2 JPS5645848B2 (enrdf_load_stackoverflow) 1981-10-29

Family

ID=12804764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4848876A Granted JPS52133022A (en) 1976-04-30 1976-04-30 Production of high purity silicon

Country Status (1)

Country Link
JP (1) JPS52133022A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673617A (en) * 1979-11-17 1981-06-18 Osaka Titanium Seizo Kk Manufacture of trichlorosilane
JPS58221269A (ja) * 1982-06-17 1983-12-22 Toshiba Corp Ｓｉ系感光体の製造装置
JPS5964516A (ja) * 1982-10-01 1984-04-12 Fuji Electric Corp Res & Dev Ltd アモルフアスシリコン膜生成方法
JP2001293332A (ja) * 2000-04-11 2001-10-23 Nippon Sanso Corp Ｃｖｄ排ガスの処理回収方法及び装置
WO2003040036A1 (fr) * 2001-10-19 2003-05-15 Tokuyama Corporation Procede de production de silicium
JP2005336045A (ja) * 2004-04-30 2005-12-08 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの製造方法
JP2008230871A (ja) * 2007-03-19 2008-10-02 Chisso Corp 多結晶シリコンの製造方法
JP2009167093A (ja) * 2008-01-14 2009-07-30 Wacker Chemie Ag 多結晶シリコンの堆積方法
WO2010116500A1 (ja) * 2009-04-08 2010-10-14 電気化学工業株式会社 トリクロロシラン冷却塔およびそれを用いたトリクロロシラン製造方法
WO2017221952A1 (ja) * 2016-06-23 2017-12-28 三菱マテリアル株式会社 多結晶シリコンロッド及びその製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673617A (en) * 1979-11-17 1981-06-18 Osaka Titanium Seizo Kk Manufacture of trichlorosilane
JPS58221269A (ja) * 1982-06-17 1983-12-22 Toshiba Corp Ｓｉ系感光体の製造装置
JPS5964516A (ja) * 1982-10-01 1984-04-12 Fuji Electric Corp Res & Dev Ltd アモルフアスシリコン膜生成方法
JP2001293332A (ja) * 2000-04-11 2001-10-23 Nippon Sanso Corp Ｃｖｄ排ガスの処理回収方法及び装置
WO2003040036A1 (fr) * 2001-10-19 2003-05-15 Tokuyama Corporation Procede de production de silicium
US6932954B2 (en) 2001-10-19 2005-08-23 Tokuyama Corporation Method for producing silicon
JP2005336045A (ja) * 2004-04-30 2005-12-08 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの製造方法
JP2008230871A (ja) * 2007-03-19 2008-10-02 Chisso Corp 多結晶シリコンの製造方法
JP2009167093A (ja) * 2008-01-14 2009-07-30 Wacker Chemie Ag 多結晶シリコンの堆積方法
WO2010116500A1 (ja) * 2009-04-08 2010-10-14 電気化学工業株式会社 トリクロロシラン冷却塔およびそれを用いたトリクロロシラン製造方法
JPWO2010116500A1 (ja) * 2009-04-08 2012-10-11 電気化学工業株式会社 トリクロロシラン冷却塔およびそれを用いたトリクロロシラン製造方法
WO2017221952A1 (ja) * 2016-06-23 2017-12-28 三菱マテリアル株式会社 多結晶シリコンロッド及びその製造方法
JPWO2017221952A1 (ja) * 2016-06-23 2019-04-11 三菱マテリアル株式会社 多結晶シリコンロッド及びその製造方法
US11306001B2 (en) 2016-06-23 2022-04-19 Mitsubishi Materials Corporation Polycrystalline silicon rod and method for producing same

Also Published As

Publication number Publication date
JPS5645848B2 (enrdf_load_stackoverflow) 1981-10-29

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