JPS52133022A - Production of high purity silicon - Google Patents

Production of high purity silicon

Info

Publication number
JPS52133022A
JPS52133022A JP4848876A JP4848876A JPS52133022A JP S52133022 A JPS52133022 A JP S52133022A JP 4848876 A JP4848876 A JP 4848876A JP 4848876 A JP4848876 A JP 4848876A JP S52133022 A JPS52133022 A JP S52133022A
Authority
JP
Japan
Prior art keywords
production
high purity
purity silicon
trichlorosilane
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4848876A
Other languages
Japanese (ja)
Other versions
JPS5645848B2 (en
Inventor
Fukuhiko Suga
Kenji Tomizawa
Shinichiro Kobayashi
Tomoko Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP4848876A priority Critical patent/JPS52133022A/en
Publication of JPS52133022A publication Critical patent/JPS52133022A/en
Publication of JPS5645848B2 publication Critical patent/JPS5645848B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To inhibit thermal decompsoition reaction of trichlorosilane in reduction of trichlorosilane with hydrogen by adding tetrachlorosilane so as to effectively carry out the reduction.
JP4848876A 1976-04-30 1976-04-30 Production of high purity silicon Granted JPS52133022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4848876A JPS52133022A (en) 1976-04-30 1976-04-30 Production of high purity silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4848876A JPS52133022A (en) 1976-04-30 1976-04-30 Production of high purity silicon

Publications (2)

Publication Number Publication Date
JPS52133022A true JPS52133022A (en) 1977-11-08
JPS5645848B2 JPS5645848B2 (en) 1981-10-29

Family

ID=12804764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4848876A Granted JPS52133022A (en) 1976-04-30 1976-04-30 Production of high purity silicon

Country Status (1)

Country Link
JP (1) JPS52133022A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673617A (en) * 1979-11-17 1981-06-18 Osaka Titanium Seizo Kk Manufacture of trichlorosilane
JPS58221269A (en) * 1982-06-17 1983-12-22 Toshiba Corp Production device for si photoreceptor
JPS5964516A (en) * 1982-10-01 1984-04-12 Fuji Electric Corp Res & Dev Ltd Formation of amorphous silicon film
JP2001293332A (en) * 2000-04-11 2001-10-23 Nippon Sanso Corp Method and device for treatment and recovery of cvd waste gas
WO2003040036A1 (en) * 2001-10-19 2003-05-15 Tokuyama Corporation Method for producing silicon
JP2005336045A (en) * 2004-04-30 2005-12-08 Mitsubishi Materials Polycrystalline Silicon Corp Method of manufacturing polycrystalline silicon
JP2008230871A (en) * 2007-03-19 2008-10-02 Chisso Corp Method for manufacturing polycrystalline silicon
JP2009167093A (en) * 2008-01-14 2009-07-30 Wacker Chemie Ag Method for depositing polycrystalline silicon
WO2010116500A1 (en) * 2009-04-08 2010-10-14 電気化学工業株式会社 Trichlorosilane cooling tower and trichlorosilane manufacturing method using the same
WO2017221952A1 (en) * 2016-06-23 2017-12-28 三菱マテリアル株式会社 Polycrystalline silicon rod and method for producing same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673617A (en) * 1979-11-17 1981-06-18 Osaka Titanium Seizo Kk Manufacture of trichlorosilane
JPS6259051B2 (en) * 1979-11-17 1987-12-09 Osaka Titanium
JPS58221269A (en) * 1982-06-17 1983-12-22 Toshiba Corp Production device for si photoreceptor
JPS5964516A (en) * 1982-10-01 1984-04-12 Fuji Electric Corp Res & Dev Ltd Formation of amorphous silicon film
JP2001293332A (en) * 2000-04-11 2001-10-23 Nippon Sanso Corp Method and device for treatment and recovery of cvd waste gas
US6932954B2 (en) 2001-10-19 2005-08-23 Tokuyama Corporation Method for producing silicon
WO2003040036A1 (en) * 2001-10-19 2003-05-15 Tokuyama Corporation Method for producing silicon
JP2005336045A (en) * 2004-04-30 2005-12-08 Mitsubishi Materials Polycrystalline Silicon Corp Method of manufacturing polycrystalline silicon
JP2008230871A (en) * 2007-03-19 2008-10-02 Chisso Corp Method for manufacturing polycrystalline silicon
JP2009167093A (en) * 2008-01-14 2009-07-30 Wacker Chemie Ag Method for depositing polycrystalline silicon
WO2010116500A1 (en) * 2009-04-08 2010-10-14 電気化学工業株式会社 Trichlorosilane cooling tower and trichlorosilane manufacturing method using the same
JPWO2010116500A1 (en) * 2009-04-08 2012-10-11 電気化学工業株式会社 Trichlorosilane cooling tower and method for producing trichlorosilane using the same
WO2017221952A1 (en) * 2016-06-23 2017-12-28 三菱マテリアル株式会社 Polycrystalline silicon rod and method for producing same
US11306001B2 (en) 2016-06-23 2022-04-19 Mitsubishi Materials Corporation Polycrystalline silicon rod and method for producing same

Also Published As

Publication number Publication date
JPS5645848B2 (en) 1981-10-29

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