JPS52128889A - Crystal growth method in liquid phase - Google Patents

Crystal growth method in liquid phase

Info

Publication number
JPS52128889A
JPS52128889A JP4538976A JP4538976A JPS52128889A JP S52128889 A JPS52128889 A JP S52128889A JP 4538976 A JP4538976 A JP 4538976A JP 4538976 A JP4538976 A JP 4538976A JP S52128889 A JPS52128889 A JP S52128889A
Authority
JP
Japan
Prior art keywords
single crystal
liquid phase
crystal growth
growth method
transposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4538976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5433950B2 (cs
Inventor
Motoyuki Yamamoto
Haruki Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4538976A priority Critical patent/JPS52128889A/ja
Publication of JPS52128889A publication Critical patent/JPS52128889A/ja
Publication of JPS5433950B2 publication Critical patent/JPS5433950B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4538976A 1976-04-23 1976-04-23 Crystal growth method in liquid phase Granted JPS52128889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4538976A JPS52128889A (en) 1976-04-23 1976-04-23 Crystal growth method in liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4538976A JPS52128889A (en) 1976-04-23 1976-04-23 Crystal growth method in liquid phase

Publications (2)

Publication Number Publication Date
JPS52128889A true JPS52128889A (en) 1977-10-28
JPS5433950B2 JPS5433950B2 (cs) 1979-10-24

Family

ID=12717901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4538976A Granted JPS52128889A (en) 1976-04-23 1976-04-23 Crystal growth method in liquid phase

Country Status (1)

Country Link
JP (1) JPS52128889A (cs)

Also Published As

Publication number Publication date
JPS5433950B2 (cs) 1979-10-24

Similar Documents

Publication Publication Date Title
JPS53108389A (en) Manufacture for semiconductor device
JPS52128889A (en) Crystal growth method in liquid phase
JPS535569A (en) Liquid-phase epitaxial growth method
JPS5211860A (en) Liquid phase epitaxial device
JPS5391684A (en) Semiconductor laser
JPS52131462A (en) Manufacture of semiconductor device
JPS51125698A (en) The formation of silicon dioxide film
JPS5358978A (en) Growing method for crystal
JPS52120797A (en) Liquid crystal display unit
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5231665A (en) Growing method of semiconductor crystal
JPS5354973A (en) Semiconductor device and its production
JPS52119858A (en) Manufacture of semi-conductor device
JPS52117550A (en) Electrode formation method
JPS5350241A (en) Electrodeposit coating
JPS5334465A (en) Manufacture for semiconductor epitaxial grown layer
JPS5384554A (en) Manufacture for semiconductor device
JPS51123781A (en) A liquid phase crystal growth apparatus
JPS548181A (en) Liquid phase epitaxial growth method for drystal
JPS52144271A (en) Preparation of semiconductor device
JPS52115783A (en) Liquid phase epitaxial growth
JPS52106380A (en) Liquid phase epitaxial growth of crystal
JPS5269560A (en) Electronic line irradiation epitaxial method
JPS5347271A (en) Selective liquid growth method of semiconductor crystal