JPS5141318B1 - - Google Patents
Info
- Publication number
- JPS5141318B1 JPS5141318B1 JP44025335A JP2533569A JPS5141318B1 JP S5141318 B1 JPS5141318 B1 JP S5141318B1 JP 44025335 A JP44025335 A JP 44025335A JP 2533569 A JP2533569 A JP 2533569A JP S5141318 B1 JPS5141318 B1 JP S5141318B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44025335A JPS5141318B1 (US06566495-20030520-M00011.png) | 1969-04-01 | 1969-04-01 | |
| US23631A US3604991A (en) | 1969-04-01 | 1970-03-30 | Injection-type semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44025335A JPS5141318B1 (US06566495-20030520-M00011.png) | 1969-04-01 | 1969-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5141318B1 true JPS5141318B1 (US06566495-20030520-M00011.png) | 1976-11-09 |
Family
ID=12163037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP44025335A Pending JPS5141318B1 (US06566495-20030520-M00011.png) | 1969-04-01 | 1969-04-01 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3604991A (US06566495-20030520-M00011.png) |
| JP (1) | JPS5141318B1 (US06566495-20030520-M00011.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61132113U (US06566495-20030520-M00011.png) * | 1985-02-06 | 1986-08-18 | ||
| JPS61181419U (US06566495-20030520-M00011.png) * | 1985-04-30 | 1986-11-12 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| GB1313252A (en) * | 1970-07-22 | 1973-04-11 | Hitachi Ltd | Semiconductor device and method for making the same |
| US4045257A (en) * | 1971-03-09 | 1977-08-30 | Jenoptik Jena G.M.B.H. | III(A)-(VB) Type luminescent diode |
| US3747016A (en) * | 1971-08-26 | 1973-07-17 | Rca Corp | Semiconductor injection laser |
| US3780359A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Bipolar transistor with a heterojunction emitter and a method fabricating the same |
| US3727115A (en) * | 1972-03-24 | 1973-04-10 | Ibm | Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous |
| JPS5310840B2 (US06566495-20030520-M00011.png) * | 1972-05-04 | 1978-04-17 | ||
| US3914136A (en) * | 1972-11-27 | 1975-10-21 | Rca Corp | Method of making a transmission photocathode device |
| US3893044A (en) * | 1973-04-12 | 1975-07-01 | Ibm | Laser device having enclosed laser cavity |
| JPS5751276B2 (US06566495-20030520-M00011.png) * | 1973-10-23 | 1982-11-01 | ||
| US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| WO2021055599A1 (en) * | 2019-09-18 | 2021-03-25 | The Regents Of The University Of California | Methods of hole injection in indium aluminum gallium nitride light-emitting diodes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
-
1969
- 1969-04-01 JP JP44025335A patent/JPS5141318B1/ja active Pending
-
1970
- 1970-03-30 US US23631A patent/US3604991A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61132113U (US06566495-20030520-M00011.png) * | 1985-02-06 | 1986-08-18 | ||
| JPS61181419U (US06566495-20030520-M00011.png) * | 1985-04-30 | 1986-11-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| US3604991A (en) | 1971-09-14 |
