JPS5093083A - - Google Patents
Info
- Publication number
- JPS5093083A JPS5093083A JP13966973A JP13966973A JPS5093083A JP S5093083 A JPS5093083 A JP S5093083A JP 13966973 A JP13966973 A JP 13966973A JP 13966973 A JP13966973 A JP 13966973A JP S5093083 A JPS5093083 A JP S5093083A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13966973A JPS5093083A (en) | 1973-12-17 | 1973-12-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13966973A JPS5093083A (en) | 1973-12-17 | 1973-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5093083A true JPS5093083A (en) | 1975-07-24 |
Family
ID=15250650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13966973A Pending JPS5093083A (en) | 1973-12-17 | 1973-12-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5093083A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5283140A (en) * | 1975-12-31 | 1977-07-11 | Ibm | Magnetic bubble domain device and method of fabricating same |
| JPS54152978A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Manufacture of insulation-gate type field effect transistor |
| JPS62274767A (en) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | Semiconductor device having high breakdown strength and manufacture thereof |
-
1973
- 1973-12-17 JP JP13966973A patent/JPS5093083A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5283140A (en) * | 1975-12-31 | 1977-07-11 | Ibm | Magnetic bubble domain device and method of fabricating same |
| JPS5652392B2 (en) * | 1975-12-31 | 1981-12-11 | ||
| JPS54152978A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Manufacture of insulation-gate type field effect transistor |
| JPS62274767A (en) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | Semiconductor device having high breakdown strength and manufacture thereof |
| JPH0525393B2 (en) * | 1986-05-23 | 1993-04-12 | Fujitsu Ltd |