JPS5039468A - - Google Patents

Info

Publication number
JPS5039468A
JPS5039468A JP49077252A JP7725274A JPS5039468A JP S5039468 A JPS5039468 A JP S5039468A JP 49077252 A JP49077252 A JP 49077252A JP 7725274 A JP7725274 A JP 7725274A JP S5039468 A JPS5039468 A JP S5039468A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49077252A
Other languages
Japanese (ja)
Other versions
JPS5738559B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5039468A publication Critical patent/JPS5039468A/ja
Publication of JPS5738559B2 publication Critical patent/JPS5738559B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP7725274A 1973-07-05 1974-07-05 Expired JPS5738559B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2334306A DE2334306B2 (de) 1973-07-05 1973-07-05 Vorrichtung zur Herstellung von epitaktischen Schichten auf Substraten aus Verbindungshalbleiter-Material

Publications (2)

Publication Number Publication Date
JPS5039468A true JPS5039468A (enrdf_load_stackoverflow) 1975-04-11
JPS5738559B2 JPS5738559B2 (enrdf_load_stackoverflow) 1982-08-16

Family

ID=5886064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7725274A Expired JPS5738559B2 (enrdf_load_stackoverflow) 1973-07-05 1974-07-05

Country Status (6)

Country Link
US (1) US3889635A (enrdf_load_stackoverflow)
JP (1) JPS5738559B2 (enrdf_load_stackoverflow)
DE (1) DE2334306B2 (enrdf_load_stackoverflow)
FR (1) FR2236270B1 (enrdf_load_stackoverflow)
GB (1) GB1433568A (enrdf_load_stackoverflow)
NL (1) NL7409158A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847091C3 (de) * 1978-10-28 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zur Herstellung von Ga↓1↓-↓x↓Al↓x↓ AS:Si-Epitaxieschichten
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US4594128A (en) * 1984-03-16 1986-06-10 Cook Melvin S Liquid phase epitaxy

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3522792A (en) * 1967-11-14 1970-08-04 Us Agriculture Device for applying a coating of varying thickness
DE1922528B2 (de) * 1969-05-02 1971-09-30 Streichgeraet zum herstellen von duennschichtchromato graphieplatten
US3791344A (en) * 1969-09-11 1974-02-12 Licentia Gmbh Apparatus for liquid phase epitaxy
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3692592A (en) * 1970-02-12 1972-09-19 Rca Corp Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase
US3697330A (en) * 1970-03-27 1972-10-10 Sperry Rand Corp Liquid epitaxy method and apparatus

Also Published As

Publication number Publication date
FR2236270B1 (enrdf_load_stackoverflow) 1978-10-13
DE2334306B2 (de) 1978-08-03
DE2334306A1 (de) 1975-01-30
GB1433568A (enrdf_load_stackoverflow) 1976-04-28
US3889635A (en) 1975-06-17
DE2334306C3 (enrdf_load_stackoverflow) 1979-04-05
NL7409158A (nl) 1975-01-07
JPS5738559B2 (enrdf_load_stackoverflow) 1982-08-16
FR2236270A1 (enrdf_load_stackoverflow) 1975-01-31

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