JPS4976470A - - Google Patents

Info

Publication number
JPS4976470A
JPS4976470A JP10833473A JP10833473A JPS4976470A JP S4976470 A JPS4976470 A JP S4976470A JP 10833473 A JP10833473 A JP 10833473A JP 10833473 A JP10833473 A JP 10833473A JP S4976470 A JPS4976470 A JP S4976470A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10833473A
Other versions
JPS539910B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19722247067 priority Critical patent/DE2247067C3/de
Application filed filed Critical
Publication of JPS4976470A publication Critical patent/JPS4976470A/ja
Publication of JPS539910B2 publication Critical patent/JPS539910B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
JP10833473A 1972-09-26 1973-09-26 Expired JPS539910B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19722247067 DE2247067C3 (ja) 1972-09-26 1972-09-26

Publications (2)

Publication Number Publication Date
JPS4976470A true JPS4976470A (ja) 1974-07-23
JPS539910B2 JPS539910B2 (ja) 1978-04-10

Family

ID=5857359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10833473A Expired JPS539910B2 (ja) 1972-09-26 1973-09-26

Country Status (5)

Country Link
US (1) US3874129A (ja)
JP (1) JPS539910B2 (ja)
DE (1) DE2247067C3 (ja)
FR (1) FR2200772A5 (ja)
GB (1) GB1418088A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211859A (en) * 1975-07-14 1977-01-29 Wacker Chemitronic Method of making semiconductor having surface without film
JPS5230159A (en) * 1975-09-01 1977-03-07 Wacker Chemitronic Method of making semiconductor surface without blur
US7481950B2 (en) 2002-09-30 2009-01-27 Fujimi Incorporated Polishing composition and polishing method using the same
WO2014129408A1 (ja) 2013-02-21 2014-08-28 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物製造方法
JP2015078318A (ja) * 2013-10-18 2015-04-23 東亞合成株式会社 Semiconductor wetting agent and polishing composition

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062658A (en) * 1975-09-03 1977-12-13 Xerox Corporation Composition and method for repairing selenium photoreceptors
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
DE2608427C2 (ja) * 1976-03-01 1984-07-19 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De
US4098031A (en) * 1977-01-26 1978-07-04 Bell Telephone Laboratories, Incorporated Method for lapping semiconductor material
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
JPS5597328A (en) * 1978-12-30 1980-07-24 Fuji Tokushiyu Shigiyou Kk Device for stacking* opening and feeding bag for automatic filling
JPS5989818U (ja) * 1982-12-07 1984-06-18
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
DE68920365T2 (de) * 1988-06-28 1995-06-08 Mitsubishi Material Silicon Verfahren zur Polierung eines Halbleiter-Plättchens.
DE3823765A1 (de) * 1988-07-13 1990-01-18 Wacker Chemitronic Verfahren zur konservierung der oberflaeche von siliciumscheiben
DE3939661C2 (ja) * 1989-11-30 1992-10-08 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De
US5816891A (en) * 1995-06-06 1998-10-06 Advanced Micro Devices, Inc. Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput
JP2000129244A (ja) 1998-10-26 2000-05-09 Hyundai Microelectronics Co Ltd 半導体素子の化学機械研磨用スラリ―及びその製造方法
JP4428473B2 (ja) * 1999-01-18 2010-03-10 Jsr株式会社 気相法無機酸化物粒子の含水固体状物質及び研磨用スラリーの製造方法
SG108221A1 (en) * 1999-03-15 2005-01-28 Tokyo Magnetic Printing Free abrasive slurry compositions and a grinding method using the same
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
CA2348296A1 (en) * 2000-05-25 2001-11-25 Narita Takehiko Method of grinding optical fiber connector
DE10058305A1 (de) * 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
US20040132308A1 (en) * 2001-10-24 2004-07-08 Psiloquest, Inc. Corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
US7601643B1 (en) * 2001-08-30 2009-10-13 Lsi Logic Corporation Arrangement and method for fabricating a semiconductor wafer
DE112011103702T5 (de) * 2010-11-08 2013-08-01 Fujimi Incorporated Zusammensetzung zum Polieren und Verfahren zum Polieren eines Halbleitersubstrats unter Verwendung derselben
US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
KR20150133694A (ko) 2013-03-19 2015-11-30 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마용 조성물 제조 방법 및 연마용 조성물 조제용 키트

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2375823A (en) * 1941-10-16 1945-05-15 Interchem Corp Polishing composition
US2375824A (en) * 1941-10-16 1945-05-15 Interchem Corp Polishing composition
US2375825A (en) * 1941-10-16 1945-05-15 Interchem Corp Polishing compositions
US2427799A (en) * 1946-09-14 1947-09-23 William T Maloney Zirconium silicate polishing material and process of preparing same
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211859A (en) * 1975-07-14 1977-01-29 Wacker Chemitronic Method of making semiconductor having surface without film
JPS5230159A (en) * 1975-09-01 1977-03-07 Wacker Chemitronic Method of making semiconductor surface without blur
JPS5410824B2 (ja) * 1975-09-01 1979-05-10
US7481950B2 (en) 2002-09-30 2009-01-27 Fujimi Incorporated Polishing composition and polishing method using the same
WO2014129408A1 (ja) 2013-02-21 2014-08-28 株式会社フジミインコーポレーテッド 研磨用組成物および研磨物製造方法
US9566685B2 (en) 2013-02-21 2017-02-14 Fujimi Incorporated Polishing composition and method for producing polished article
JP2015078318A (ja) * 2013-10-18 2015-04-23 東亞合成株式会社 Semiconductor wetting agent and polishing composition

Also Published As

Publication number Publication date
DE2247067A1 (de) 1974-04-04
GB1418088A (en) 1975-12-17
FR2200772A5 (ja) 1974-04-19
DE2247067B2 (ja) 1978-11-30
US3874129A (en) 1975-04-01
DE2247067C3 (ja) 1979-08-09
JPS539910B2 (ja) 1978-04-10

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