JPS4953782A - - Google Patents

Info

Publication number
JPS4953782A
JPS4953782A JP8718873A JP8718873A JPS4953782A JP S4953782 A JPS4953782 A JP S4953782A JP 8718873 A JP8718873 A JP 8718873A JP 8718873 A JP8718873 A JP 8718873A JP S4953782 A JPS4953782 A JP S4953782A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8718873A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4953782A publication Critical patent/JPS4953782A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP8718873A 1972-08-04 1973-08-02 Pending JPS4953782A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722238564 DE2238564C3 (de) 1972-08-04 1972-08-04 Thyristor

Publications (1)

Publication Number Publication Date
JPS4953782A true JPS4953782A (de) 1974-05-24

Family

ID=5852732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8718873A Pending JPS4953782A (de) 1972-08-04 1973-08-02

Country Status (8)

Country Link
JP (1) JPS4953782A (de)
BE (1) BE803196A (de)
CH (1) CH554074A (de)
DE (1) DE2238564C3 (de)
FR (1) FR2195073B1 (de)
GB (1) GB1436411A (de)
NL (1) NL7310532A (de)
SE (1) SE384598B (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109372A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
JPS57113878U (de) * 1980-12-28 1982-07-14
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS59158560A (ja) * 1983-02-18 1984-09-08 ウエスチングハウス エレクトリック コ−ポレ−ション パンチスル−現象を利用して過電圧保護を行う光トリガサイリスタ
JPS59158561A (ja) * 1983-02-18 1984-09-08 ウエスチングハウス エレクトリック コ−ポレ−ション アバランシエにより過電圧から自己保護するサイリスタおよびその製造方法
JPS59208781A (ja) * 1983-05-09 1984-11-27 ウエスチングハウス エレクトリツク コ−ポレ−シヨン サイリスタとその製造方法
JPS6042864A (ja) * 1983-05-26 1985-03-07 ゼネラル・エレクトリツク・カンパニイ なだれ電圧ブレ−クオ−バ区域内に電界抑制層を持つ電圧ブレ−クオ−バ保護型サイリスタ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109373A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3931589A1 (de) * 1989-09-22 1991-04-04 Bosch Gmbh Robert Halbleiterschaltelement
WO1998034282A1 (de) * 1997-01-31 1998-08-06 Siemens Aktiengesellschaft Asymmetrischer thyristor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109372A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
JPS57113878U (de) * 1980-12-28 1982-07-14
JPS6029885Y2 (ja) * 1980-12-28 1985-09-09 株式会社シマノ 釣竿
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS59158560A (ja) * 1983-02-18 1984-09-08 ウエスチングハウス エレクトリック コ−ポレ−ション パンチスル−現象を利用して過電圧保護を行う光トリガサイリスタ
JPS59158561A (ja) * 1983-02-18 1984-09-08 ウエスチングハウス エレクトリック コ−ポレ−ション アバランシエにより過電圧から自己保護するサイリスタおよびその製造方法
JPS59208781A (ja) * 1983-05-09 1984-11-27 ウエスチングハウス エレクトリツク コ−ポレ−シヨン サイリスタとその製造方法
JPH0248147B2 (de) * 1983-05-09 1990-10-24 Westinghouse Electric Corp
JPS6042864A (ja) * 1983-05-26 1985-03-07 ゼネラル・エレクトリツク・カンパニイ なだれ電圧ブレ−クオ−バ区域内に電界抑制層を持つ電圧ブレ−クオ−バ保護型サイリスタ

Also Published As

Publication number Publication date
GB1436411A (en) 1976-05-19
DE2238564A1 (de) 1974-02-21
DE2238564C3 (de) 1981-02-19
CH554074A (de) 1974-09-13
FR2195073A1 (de) 1974-03-01
DE2238564B2 (de) 1980-06-12
SE384598B (sv) 1976-05-10
NL7310532A (de) 1974-02-06
FR2195073B1 (de) 1978-03-17
BE803196A (fr) 1973-12-03

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