JPS4951834A - - Google Patents
Info
- Publication number
- JPS4951834A JPS4951834A JP47094371A JP9437172A JPS4951834A JP S4951834 A JPS4951834 A JP S4951834A JP 47094371 A JP47094371 A JP 47094371A JP 9437172 A JP9437172 A JP 9437172A JP S4951834 A JPS4951834 A JP S4951834A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9437172A JPS5433498B2 (US20110158925A1-20110630-C00042.png) | 1972-09-19 | 1972-09-19 | |
| US398339A US3866188A (en) | 1972-09-19 | 1973-09-18 | Memory circuit |
| DE19732347228 DE2347228A1 (de) | 1972-09-19 | 1973-09-19 | Speicherschaltung |
| FR7333633A FR2200581B1 (US20110158925A1-20110630-C00042.png) | 1972-09-19 | 1973-09-19 | |
| IT29122/73A IT993311B (it) | 1972-09-19 | 1973-09-19 | Circuito di memoria per elaboratori elettronici |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9437172A JPS5433498B2 (US20110158925A1-20110630-C00042.png) | 1972-09-19 | 1972-09-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4951834A true JPS4951834A (US20110158925A1-20110630-C00042.png) | 1974-05-20 |
| JPS5433498B2 JPS5433498B2 (US20110158925A1-20110630-C00042.png) | 1979-10-20 |
Family
ID=14108442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9437172A Expired JPS5433498B2 (US20110158925A1-20110630-C00042.png) | 1972-09-19 | 1972-09-19 |
Country Status (5)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4286330A (en) * | 1976-04-07 | 1981-08-25 | Isaacson Joel D | Autonomic string-manipulation system |
| JPS55132593A (en) * | 1979-04-02 | 1980-10-15 | Fujitsu Ltd | Refresh control method for memory unit |
| JPS55135392A (en) * | 1979-04-04 | 1980-10-22 | Nec Corp | Memory circuit |
| US4758993A (en) * | 1984-11-19 | 1988-07-19 | Fujitsu Limited | Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays |
| US7079422B1 (en) | 2000-04-25 | 2006-07-18 | Samsung Electronics Co., Ltd. | Periodic refresh operations for non-volatile multiple-bit-per-cell memory |
| US6396744B1 (en) * | 2000-04-25 | 2002-05-28 | Multi Level Memory Technology | Flash memory with dynamic refresh |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3748651A (en) * | 1972-02-16 | 1973-07-24 | Cogar Corp | Refresh control for add-on semiconductor memory |
| US3790961A (en) * | 1972-06-09 | 1974-02-05 | Advanced Memory Syst Inc | Random access dynamic semiconductor memory system |
-
1972
- 1972-09-19 JP JP9437172A patent/JPS5433498B2/ja not_active Expired
-
1973
- 1973-09-18 US US398339A patent/US3866188A/en not_active Expired - Lifetime
- 1973-09-19 FR FR7333633A patent/FR2200581B1/fr not_active Expired
- 1973-09-19 DE DE19732347228 patent/DE2347228A1/de active Pending
- 1973-09-19 IT IT29122/73A patent/IT993311B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| US3866188A (en) | 1975-02-11 |
| IT993311B (it) | 1975-09-30 |
| JPS5433498B2 (US20110158925A1-20110630-C00042.png) | 1979-10-20 |
| FR2200581A1 (US20110158925A1-20110630-C00042.png) | 1974-04-19 |
| FR2200581B1 (US20110158925A1-20110630-C00042.png) | 1977-05-27 |
| DE2347228A1 (de) | 1974-04-11 |
