JPS4949307B1 - - Google Patents
Info
- Publication number
- JPS4949307B1 JPS4949307B1 JP1393270A JP1393270A JPS4949307B1 JP S4949307 B1 JPS4949307 B1 JP S4949307B1 JP 1393270 A JP1393270 A JP 1393270A JP 1393270 A JP1393270 A JP 1393270A JP S4949307 B1 JPS4949307 B1 JP S4949307B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1393270A JPS4949307B1 (de) | 1970-02-18 | 1970-02-18 | |
| DE19712107646 DE2107646A1 (de) | 1970-02-18 | 1971-02-17 | Vorrichtung zum Züchten von Einkristallen aus Schmelzen |
| GB2207071A GB1347108A (en) | 1970-02-18 | 1971-04-19 | Apparatus for growing single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1393270A JPS4949307B1 (de) | 1970-02-18 | 1970-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4949307B1 true JPS4949307B1 (de) | 1974-12-26 |
Family
ID=11846948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1393270A Pending JPS4949307B1 (de) | 1970-02-18 | 1970-02-18 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4949307B1 (de) |
| DE (1) | DE2107646A1 (de) |
| GB (1) | GB1347108A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007509026A (ja) * | 2003-10-23 | 2007-04-12 | クリスタル グロウイング システムズ ゲゼルシヤフト ミット ベシュレンクテル ハフツング | 結晶成長装置 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2059932B (en) * | 1979-09-20 | 1983-10-12 | Sony Corp | Solidification processes |
| US4565671A (en) * | 1983-08-05 | 1986-01-21 | Kabushiki Kaisha Toshiba | Single crystal manufacturing apparatus |
| JPS6046998A (ja) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上方法及びそのための装置 |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| JPH08143391A (ja) * | 1993-06-01 | 1996-06-04 | Texas Instr Inc <Ti> | チョクラルスキ結晶引上げ装置に使用する螺旋加熱器 |
| DE10102126A1 (de) | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium |
| DE102007028547B4 (de) | 2007-06-18 | 2009-10-08 | Forschungsverbund Berlin E.V. | Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen |
| DE102007046409B4 (de) | 2007-09-24 | 2009-07-23 | Forschungsverbund Berlin E.V. | Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen |
| DE102008027359B4 (de) | 2008-06-04 | 2012-04-12 | Forschungsverbund Berlin E.V. | Verfahren zur intensiven Durchmischung von elektrisch leitenden Schmelzen in Kristallisations- und Erstarrungsprozessen |
| DE102009045680B4 (de) | 2009-10-14 | 2012-03-22 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Herstellung von Siliziumblöcken aus der Schmelze durch gerichtete Erstarrung |
| DE102009046845A1 (de) | 2009-11-18 | 2011-06-01 | Forschungsverbund Berlin E.V. | Kristallisationsanlage und Kristallisationsverfahren |
| DE102010041061B4 (de) | 2010-09-20 | 2013-10-24 | Forschungsverbund Berlin E.V. | Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist |
| DE102012204000A1 (de) * | 2012-03-14 | 2013-09-19 | Siltronic Ag | Ringförmiger Widerstandsheizer und Verfahren zum Zuführen von Wärme zu einem kristallisierenden Einkristall |
| AT526173A1 (de) * | 2022-05-20 | 2023-12-15 | Ebner Ind Ofenbau | Temperiereinrichtung |
| CN115852483B (zh) * | 2023-02-27 | 2023-05-16 | 杭州天桴光电技术有限公司 | 一种制备圆饼状氟化镁晶体镀膜材料的装置和方法 |
| CN115852484B (zh) * | 2023-02-27 | 2023-05-16 | 杭州天桴光电技术有限公司 | 一种高效制备氟化镁多晶光学镀膜材料的装置和方法 |
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1970
- 1970-02-18 JP JP1393270A patent/JPS4949307B1/ja active Pending
-
1971
- 1971-02-17 DE DE19712107646 patent/DE2107646A1/de active Pending
- 1971-04-19 GB GB2207071A patent/GB1347108A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007509026A (ja) * | 2003-10-23 | 2007-04-12 | クリスタル グロウイング システムズ ゲゼルシヤフト ミット ベシュレンクテル ハフツング | 結晶成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1347108A (en) | 1974-02-27 |
| DE2107646A1 (de) | 1971-10-07 |