JPS4919766A - - Google Patents
Info
- Publication number
- JPS4919766A JPS4919766A JP5991672A JP5991672A JPS4919766A JP S4919766 A JPS4919766 A JP S4919766A JP 5991672 A JP5991672 A JP 5991672A JP 5991672 A JP5991672 A JP 5991672A JP S4919766 A JPS4919766 A JP S4919766A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5991672A JPS5312359B2 (https=) | 1972-06-14 | 1972-06-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5991672A JPS5312359B2 (https=) | 1972-06-14 | 1972-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4919766A true JPS4919766A (https=) | 1974-02-21 |
| JPS5312359B2 JPS5312359B2 (https=) | 1978-04-28 |
Family
ID=13126919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5991672A Expired JPS5312359B2 (https=) | 1972-06-14 | 1972-06-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5312359B2 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434676A (en) * | 1977-08-23 | 1979-03-14 | Fujitsu Ltd | Vapor growth method and apparatus for high-purity semiconductor layer |
| JPS61104079A (ja) * | 1984-10-25 | 1986-05-22 | モートン チオコール インコーポレーテツド | 混成有機金属化合物及び該化合物を用いる金属有機化学的蒸着方法 |
| JPS6481312A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Vapor phase growth method of compound semiconductor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105926636B (zh) * | 2016-05-13 | 2018-03-20 | 中国矿业大学 | 深基坑冻结封底施工方法 |
-
1972
- 1972-06-14 JP JP5991672A patent/JPS5312359B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434676A (en) * | 1977-08-23 | 1979-03-14 | Fujitsu Ltd | Vapor growth method and apparatus for high-purity semiconductor layer |
| JPS61104079A (ja) * | 1984-10-25 | 1986-05-22 | モートン チオコール インコーポレーテツド | 混成有機金属化合物及び該化合物を用いる金属有機化学的蒸着方法 |
| JPS6481312A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Vapor phase growth method of compound semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5312359B2 (https=) | 1978-04-28 |