JPS4916378A - - Google Patents

Info

Publication number
JPS4916378A
JPS4916378A JP4961272A JP4961272A JPS4916378A JP S4916378 A JPS4916378 A JP S4916378A JP 4961272 A JP4961272 A JP 4961272A JP 4961272 A JP4961272 A JP 4961272A JP S4916378 A JPS4916378 A JP S4916378A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4961272A
Other versions
JPS539712B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4961272A priority Critical patent/JPS539712B2/ja
Publication of JPS4916378A publication Critical patent/JPS4916378A/ja
Publication of JPS539712B2 publication Critical patent/JPS539712B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • H01L21/30621Vapour phase etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
JP4961272A 1972-05-18 1972-05-18 Expired JPS539712B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4961272A JPS539712B2 (ja) 1972-05-18 1972-05-18

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4961272A JPS539712B2 (ja) 1972-05-18 1972-05-18
DE19732325106 DE2325106A1 (de) 1972-05-18 1973-05-17 Halbleiter und verfahren zur gasaetzung von halbleiterelementen
US36126573 US3923569A (en) 1972-05-18 1973-05-17 Method of etching a semiconductor element
FR7317978A FR2184995B1 (ja) 1972-05-18 1973-05-17
CA171,822A CA988628A (en) 1972-05-18 1973-05-18 Method of etching a semiconductor element
GB2373673A GB1426600A (en) 1972-05-18 1973-05-18 Method of etching a semiconductor element

Publications (2)

Publication Number Publication Date
JPS4916378A true JPS4916378A (ja) 1974-02-13
JPS539712B2 JPS539712B2 (ja) 1978-04-07

Family

ID=12836043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4961272A Expired JPS539712B2 (ja) 1972-05-18 1972-05-18

Country Status (6)

Country Link
US (1) US3923569A (ja)
JP (1) JPS539712B2 (ja)
CA (1) CA988628A (ja)
DE (1) DE2325106A1 (ja)
FR (1) FR2184995B1 (ja)
GB (1) GB1426600A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113459U (ja) * 1977-02-18 1978-09-09
JPS55123958A (en) * 1979-03-15 1980-09-24 Tokyo Shibaura Electric Co Air conditioner

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159917A (en) * 1977-05-27 1979-07-03 Eastman Kodak Company Method for use in the manufacture of semiconductor devices
US4207138A (en) * 1979-01-17 1980-06-10 Rca Corporation Mercury vapor leaching from microelectronic substrates
US4366186A (en) * 1979-09-27 1982-12-28 Bell Telephone Laboratories, Incorporated Ohmic contact to p-type InP
US4285763A (en) * 1980-01-29 1981-08-25 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V semiconductor compounds
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4689115A (en) * 1985-04-26 1987-08-25 American Telephone And Telegraph Company, At&T Bell Laboratories Gaseous etching process
US8734661B2 (en) * 2007-10-15 2014-05-27 Ebara Corporation Flattening method and flattening apparatus
FR3038127B1 (fr) 2015-06-24 2017-06-23 Commissariat Energie Atomique Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6501786A (ja) * 1964-02-26 1965-08-27
FR1450842A (fr) * 1964-07-20 1966-06-24 Siemens Ag Procédé pour réaliser des couches d'oxyde, planes et très pures, sur des monocristaux de silicium
US3390011A (en) * 1965-03-23 1968-06-25 Texas Instruments Inc Method of treating planar junctions
US3518132A (en) * 1966-07-12 1970-06-30 Us Army Corrosive vapor etching process for semiconductors using combined vapors of hydrogen fluoride and nitrous oxide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113459U (ja) * 1977-02-18 1978-09-09
JPS55123958A (en) * 1979-03-15 1980-09-24 Tokyo Shibaura Electric Co Air conditioner

Also Published As

Publication number Publication date
US3923569A (en) 1975-12-02
FR2184995A1 (ja) 1973-12-28
GB1426600A (en) 1976-03-03
CA988628A (en) 1976-05-04
FR2184995B1 (ja) 1976-05-28
DE2325106A1 (de) 1973-11-29
CA988628A1 (ja)
USB361265I5 (ja) 1975-01-28
JPS539712B2 (ja) 1978-04-07

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