JPS4915903B1 - - Google Patents
Info
- Publication number
- JPS4915903B1 JPS4915903B1 JP44065205A JP6520569A JPS4915903B1 JP S4915903 B1 JPS4915903 B1 JP S4915903B1 JP 44065205 A JP44065205 A JP 44065205A JP 6520569 A JP6520569 A JP 6520569A JP S4915903 B1 JPS4915903 B1 JP S4915903B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP44065205A JPS4915903B1 (US20020095090A1-20020718-M00002.png) | 1969-08-18 | 1969-08-18 | |
US63846A US3660178A (en) | 1969-08-18 | 1970-08-14 | Method of diffusing an impurity into a compound semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP44065205A JPS4915903B1 (US20020095090A1-20020718-M00002.png) | 1969-08-18 | 1969-08-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4915903B1 true JPS4915903B1 (US20020095090A1-20020718-M00002.png) | 1974-04-18 |
Family
ID=13280165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP44065205A Pending JPS4915903B1 (US20020095090A1-20020718-M00002.png) | 1969-08-18 | 1969-08-18 |
Country Status (2)
Country | Link |
---|---|
US (1) | US3660178A (US20020095090A1-20020718-M00002.png) |
JP (1) | JPS4915903B1 (US20020095090A1-20020718-M00002.png) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50132009U (US20020095090A1-20020718-M00002.png) * | 1974-04-15 | 1975-10-30 | ||
JPS50140105A (US20020095090A1-20020718-M00002.png) * | 1974-04-27 | 1975-11-10 | ||
JPS50140428U (US20020095090A1-20020718-M00002.png) * | 1974-05-02 | 1975-11-19 | ||
JPS5141422U (US20020095090A1-20020718-M00002.png) * | 1974-09-20 | 1976-03-27 | ||
JPS51128506U (US20020095090A1-20020718-M00002.png) * | 1975-04-15 | 1976-10-18 | ||
JPS51145024U (US20020095090A1-20020718-M00002.png) * | 1975-05-15 | 1976-11-22 | ||
JPS51145025U (US20020095090A1-20020718-M00002.png) * | 1975-05-15 | 1976-11-22 | ||
JPS5236912U (US20020095090A1-20020718-M00002.png) * | 1975-09-08 | 1977-03-16 | ||
JPS53121007U (US20020095090A1-20020718-M00002.png) * | 1977-03-02 | 1978-09-26 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1332994A (en) * | 1971-01-11 | 1973-10-10 | Mullard Ltd | Method of diffusing an impurity into a semiconductor body |
US3767471A (en) * | 1971-09-01 | 1973-10-23 | Bell Telephone Labor Inc | Group i-iii-vi semiconductors |
US3890169A (en) * | 1973-03-26 | 1975-06-17 | Bell Telephone Labor Inc | Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing |
DE2214224C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen |
FR2178751B1 (US20020095090A1-20020718-M00002.png) * | 1972-04-05 | 1974-10-18 | Radiotechnique Compelec | |
JPH0793277B2 (ja) * | 1989-02-28 | 1995-10-09 | インダストリアル・テクノロジー・リサーチ・インステイテユート | InP基板中へのCd拡散方法 |
GB2482311A (en) | 2010-07-28 | 2012-02-01 | Sharp Kk | II-III-N and II-N semiconductor nanoparticles, comprising the Group II elements Zinc (Zn) or Magensium (Mg) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3001896A (en) * | 1958-12-24 | 1961-09-26 | Ibm | Diffusion control in germanium |
US3139362A (en) * | 1961-12-29 | 1964-06-30 | Bell Telephone Labor Inc | Method of manufacturing semiconductive devices |
US3239393A (en) * | 1962-12-31 | 1966-03-08 | Ibm | Method for producing semiconductor articles |
GB1052379A (US20020095090A1-20020718-M00002.png) * | 1963-03-28 | 1900-01-01 | ||
NL6407230A (US20020095090A1-20020718-M00002.png) * | 1963-09-28 | 1965-03-29 | ||
GB1098564A (en) * | 1966-09-20 | 1968-01-10 | Standard Telephones Cables Ltd | A method for producing gallium arsenide devices |
US3544468A (en) * | 1968-08-09 | 1970-12-01 | Zenith Radio Corp | Production of high-conductivity n-type zns,znse,zns/znse,or znse/znte |
-
1969
- 1969-08-18 JP JP44065205A patent/JPS4915903B1/ja active Pending
-
1970
- 1970-08-14 US US63846A patent/US3660178A/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50132009U (US20020095090A1-20020718-M00002.png) * | 1974-04-15 | 1975-10-30 | ||
JPS50140105A (US20020095090A1-20020718-M00002.png) * | 1974-04-27 | 1975-11-10 | ||
JPS50140428U (US20020095090A1-20020718-M00002.png) * | 1974-05-02 | 1975-11-19 | ||
JPS5141422U (US20020095090A1-20020718-M00002.png) * | 1974-09-20 | 1976-03-27 | ||
JPS51128506U (US20020095090A1-20020718-M00002.png) * | 1975-04-15 | 1976-10-18 | ||
JPS51145024U (US20020095090A1-20020718-M00002.png) * | 1975-05-15 | 1976-11-22 | ||
JPS51145025U (US20020095090A1-20020718-M00002.png) * | 1975-05-15 | 1976-11-22 | ||
JPS5236912U (US20020095090A1-20020718-M00002.png) * | 1975-09-08 | 1977-03-16 | ||
JPS53121007U (US20020095090A1-20020718-M00002.png) * | 1977-03-02 | 1978-09-26 |
Also Published As
Publication number | Publication date |
---|---|
US3660178A (en) | 1972-05-02 |