JPS4881094A - - Google Patents
Info
- Publication number
- JPS4881094A JPS4881094A JP47011098A JP1109872A JPS4881094A JP S4881094 A JPS4881094 A JP S4881094A JP 47011098 A JP47011098 A JP 47011098A JP 1109872 A JP1109872 A JP 1109872A JP S4881094 A JPS4881094 A JP S4881094A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Welding Or Cutting Using Electron Beams (AREA)
- Drying Of Semiconductors (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1109872A JPS5332518B2 (en) | 1972-01-31 | 1972-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1109872A JPS5332518B2 (en) | 1972-01-31 | 1972-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4881094A true JPS4881094A (en) | 1973-10-30 |
| JPS5332518B2 JPS5332518B2 (en) | 1978-09-08 |
Family
ID=11768514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1109872A Expired JPS5332518B2 (en) | 1972-01-31 | 1972-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5332518B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5411900A (en) * | 1977-06-30 | 1979-01-29 | Toshiba Corp | Method of fabricating piezo-electric substrate for use in elstic surface wave element |
| JPS63208220A (en) * | 1987-02-25 | 1988-08-29 | Hitachi Ltd | Converged ion beam application |
| JP2007027097A (en) * | 2005-07-13 | 2007-02-01 | Samsung Electronics Co Ltd | Neutral beam etching device separately accelerating plasma |
-
1972
- 1972-01-31 JP JP1109872A patent/JPS5332518B2/ja not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5411900A (en) * | 1977-06-30 | 1979-01-29 | Toshiba Corp | Method of fabricating piezo-electric substrate for use in elstic surface wave element |
| JPS63208220A (en) * | 1987-02-25 | 1988-08-29 | Hitachi Ltd | Converged ion beam application |
| JP2007027097A (en) * | 2005-07-13 | 2007-02-01 | Samsung Electronics Co Ltd | Neutral beam etching device separately accelerating plasma |
| US7789992B2 (en) | 2005-07-13 | 2010-09-07 | Samsung Electronics Co., Ltd. | Neutral beam etching device for separating and accelerating plasma |
| JP4563346B2 (en) * | 2005-07-13 | 2010-10-13 | 三星電子株式会社 | Neutral beam etching system to separate and accelerate plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5332518B2 (en) | 1978-09-08 |